The Institute of Technical Physics and Materials Science of the Hungarian Academy of Sciences, Epistar Corporation and Semilab published a joint research paper in a recent issue of Applied Surface Science. In the reported work, highly conductive and uniform Ga doped ZnO (GZO) films were prepared by atomic layer deposition (ALD) as transparent conductive layers for InGaN/GaN LEDs. After optimizing the Ga doping concentration, the TCO layer's lateral homogeneity was measured by spectroscopic ellipsometry and Eddy current mapping.
Oral presentation at PVTC 2016 conference (Photovoltaic Technical Conference) – May 9-11 Marseille, France
Presentation date / time: May 11, 14:40
Title / authors:
Inline PL Imaging Techniques for Crystalline Silicon Cell Production
F. Korsós, Z. Kiss, Ch. Defranoux and S. Gaillard, Semilab Co. Ltd. (Hungary)