Literature


Year
Title
Author
Published
Topic
2018
Micro-Photoluminescence Imaging of Dislocation Generation in 0.18 μm Power Semiconductor Devices with Deep Trenches
Author
L. Jastrzebski, G. Nadudvari, D. T. Cseh, L. Roszol, G. Molnar, I. Lajtos
Topic
Micro-Photoluminescence Imaging, Dislocation Generation, Semiconductor Devices, Deep Trenches, Wafer Fabrication
2018
Efficiency limiting crystal defects in monocrystalline silicon and their characterization in production
Author
F. Korsós, L. Roszol, F. Jay, T. Szarvas, Z. Kiss, A. Szabó, I. Soczó, Gy. Nádudvari, N. Laurent
Topic
Czochralski, Bulk micro defects, Thermal history, Light scattering tomography, PERT solar cells, carrier lifetime
2018
Point and extended defect interaction in low – high energy phosphorus implantation sequences
Author
I. Mica, M. L. Polignano, P. Bacciaglia, D. Brazzelli, D. Cseh, A. Galbiati, S. Grasso, M. Juhel, Z. T. Kiss, P. Monge Roffarello, E. Tomezzoli, A. M. Torti
Topic
Silicon, P implantation sequences, Implantation defects, annealing
2018
Analysis of near-surface metal contamination by photoluminescence measurements
Author
M.L. Polignano, A. Galbiati, I. Mica, D. Magni, D. Cseh, F. Jay, P. Basa, N. Laurent, I. Lajtos, G. Molnár, L. Dudás, L. Roszol, L. Jastrzebski
Topic
Carrier diffusion length, metal contamination, photoluminescence
2017
Refractive Indexes and Extinction Coefficients of n- and p-type Doped GaInP, AlInP and AlGaInP for Multijunction Solar Cells
Author
E. Ochoa-Martínez, L. Barrutia, M. Ochoa, E. Barrigón, I. García, I. Rey-Stolle, C. Algora, P. Basa, G. Kronome, M. Gabás
Topic
refractive index, n-type, p-type, doped GaInP, AlInP, AlGaInP, multijunction solar cells
2017
Silica Sol-gel Coatings with Improved Light Transmittance and Stability
Author
L. Kócs, E. Albert, B. Tegze, M. Kabai-Faix,Cs. Major, A. Szalai, P. Basa, Z. Hórvölgyi
Topic
sol-gel coating, improved light transmittance, long-term optical stability, network strengthening, porosity
2017
Photoluminescence for In-Line Buried Defects Detection in Silicon Devices
Author
R. Duru, D. Le-Cunff, M. Cannac, N. Laurent, L. Dudas, Z.T. Kiss, D. Cseh, I. Lajtos, F. Jay, Gy. Nadudvari
Published
Topic
photoluminescence, dislocations, buried defects, non-visual defects
2017
Surface Strained Ge-Cz Wafers by Sn-Implantation For High Electron and Hole Mobility
Author
J. Borland, M. Sugitani, S.S. Chaung, Y.J. Lee, K. Huet, A. Joshi, A. Wan, L. Wong, P. Horvath, A. Finley
Published
Topic
Surface Strained Ge-Cz Wafers By Sn-Implantation For High Electron And Hole Mobility
2016
Inkjet-Printed Vertically Emitting Solid-State Organic Lasers
Author
O. Mhibik, S. Ch´enais, S. Forget, Ch. Defranoux, S. Sanaur
Topic
vertically-emitting solid-state organic lasers (VECSOLs); inkjet printing; new host polymer matrix for standard laser dyes; Tunable laser
2016
Homogeneous Transparent Conductive ZnO:Ga by ALD for Large LED Wafers
Author
Z. Szabó, Zs. Baji, P. Basa, Zs. Czigány, I. Bársony, H-Y. Wang, J. Volk
Topic
GZO; Atomic layer deposition; TCO; Rapid thermal annealing; LED
2016
Optical characterization of the coloration process in electrochromicamorphous and crystalline WO3films by spectroscopic ellipsometry
Author
G. Yuan, Ch. Hua, L. Huang, Ch. Defranoux, P. Basa, Y. Liu, Ch. Song, G. Han
Topic
spectroscopic ellipsometry, WO3, Electrochromic film, Coloration process
2016
Surface modification and porosimetry of vertically aligned hexagonal mesoporous silica films
Author
C. Robertson, A. W. Lodge, P. Basa, M. Carravetta, A. L. Hector, R. J. Kashtiban, J. Sloan, D. C. Smith, J. Spencer, A. Walcarius
Topic
Mesoporous silica films, Vertically aligned hexagonal pores, Electrochemically assisted surfactant assembly (EASA), Porosimetry
2015
Introducing Nanoscaled Surface Morphology and Percolation Barrier Network into Mesoporous Silica Coatings
Author
E. Albert, P. Basa, A. Deák, A. Németh, Z. Osváth, G. Sáfrán, Z. Zolnai, Z. Hórvölgyi, N. Nagy
Topic
nanopatterning process, multilayer, porous silica coatings, hexagonally ordered silica spheres, ion irradiation, artificial surface morphologies, sub-micron scale
2015
Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC
Author
M. Wilson, A. Savtchouk, A. Findlay, J. Lagowski, P. Edelman, D. Marinskiy, J. D’Amico, F. Korsós, N. Orsós, M. Cs. Varga
Topic
Defect Mapping, lifetime, silicon carbide (SiC), Triangular Defect
2015
lmproved Non-Contact Capacitance-Voltage Technique for Resistivity Profiling of Epitaxial Silicon
Author
P. Horvath, R. Ring, P. Tutto
Published

15th European Advanced Process Control and Manufacturing (apc|m) Conference

Topic
2015
Carrier Scattering and Relaxation Dynamics in n-Type In0.83Ga0.17As as a Function of Temperature and Doping Density
Author
Y. Ma, Y. Gu, Y. Zhang, X. Chen, S. Xi, Z. Boldizsár, L. Huang, L. Zhou
Topic
Carrier scattering, relaxation dynamics, In0.83Ga0.17As
2015
Antibacterial Properties of Ag–TiO2 Composite Sol–Gel Coatings
Author
E. Albert, P.A. Albouy, A. Ayral, P. Basa, G. Csík, N. Nagy, S. Roualdès, V. Rouessac, G. Sáfrán, Á. Suhajda, Z. Zolnai, Z. Hórvölgyi
Topic
of long-term antibacterial activity, silver doped titania coatings, titania layer structure
2015
Ellipsometry Study of Process Deposition of Amorphous Indium Gallium Zinc Oxide Sputtered Thin Films
Author
C. Talagrand, X. Boddaert, D.G. Selmeczi, C. Defranoux, P. Collot
Topic
InGaZnO, spectroscopic ellipsometry, Dielectric function, Process deposition, Amorphous semiconductor
2014
Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In0.53 Ga0.47 As/Al2O3/HfO2 Stack
Author
J. D’Amico, A. Savtchouk, M. Wilson, J. Lagowski, W. Wang, T. Kim, G. Bersuker, D. Veksler, D. Koh
Topic
corona charge, non-contact C-V, non-contact I-V, dielectric characterization
2014
Study of Annealing Effects Upon the Optical and Electrical Properties of SnO2:F/SiCxOy Low Emissivity Coatings by Spectroscopic Ellipsometry
Author
K. Wang, B. Cheng, B. Wu, C. Defranoux, P. Basa, C. Song, G. Han, Y. Liu
Topic
spectroscopic ellipsometry, Fluorinated tin oxide, Low emissivity, annealing
2014
New Approach to Surface Voltage Based Non-Visual Defect Inspection
Author
D. Marinskiy, J. Lagowski, M. Wilson, A. Findlay, C. Almeida, P. Edelman
Topic
surface voltage, defect inspection, Kelvin probe
2014
Measuring CET of High-k Dielectrics with Novel Kinetic Approach Using Micro-Site Corona – Kelvin Method
Author
D. Marinskiy, T.C. Loy, H.C. Yeh, M. Wilson, J. Lagowski
Topic
Corona-Kelvin Metrology, high-k dielectrics, capacitance equivalent thickness, corona discharge
2014
Air Gap CV Measurement for Doping Concentration in Epitaxial Silicon
Author
F. Heider, J. Baumgartl, P. Horváth, T. Jaehrling
Topic
air gaps, capacitance measurement, doping profile, Electrical resistivity, epitaxial layer, Silicon (Si), voltage measurement
2014
Detection and Characterization of Three-Dimensional Interconnect Bonding Voids by Infrared Microscopy
Author
J. Höglund, Z. Kiss, G. Nádudvari, Zs. Kovács, Sz. Velkei, C. Moore, V. Vartanian, R.A. Allen
Topic
infrared, microscopy, optical inspection, optical systems
2014
Transient Method for Lifetime Characterization of Monocrystalline Si Ingots
Author
G. Paráda, F. Korsós, P. Tüttő
Topic
carrier lifetime, Monocrystalline, Ingot
2014
Dielectric properties of SURMOF HKUST-1 films
Author
M. Krishtab, G. Pourtois, K. Vanstreels, H. Gliemann, M. Tsotsalas, C. Wöll, R. Hillard, M. Tallian, S. De Gendt, M. Baklanov
Published

MRS Spring Meeting Symposium CC: New Materials and Processes for Interconnects, Novel Memory and Advanced Display Technologies location:San Francisco, CA USA date:2014-04-21

Topic
2014
A Novel Approach to Measuring Doping in SiC by Micro Spot Corona-Kelvin Method
Author
D. Marinskiy, A. Savtchouk
Topic
corona - Kelvin, silicon carbide (SiC), doping
2014
Lifetime Characterization of mc:Si Bricks by Upgraded μ-PCD Technique
Author
F. Korsós, A. Jász
Topic
Microwave Photoconductive Decay (μ-PCD), photoconductive decay, surface recombination
2014
MBIR Characterization of Photosensitive Polyimide in High Volume Manufacturing
Author
T.E. Kagalwala, B.M. Erwin, V.L. Calero-DdelC, Y.M. Brovman, J. Hoglund
Topic
chip scale packaging, flip-chip devices, passivation, process monitoring, reflectometry
2014
Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces
Author
A. Findlay, J. Lagowski, M. Wilson, J. D'Amico, A. Savtchouk, F. Korsós, G. Nádudvari
Topic
corona charge, Microwave, Passivation Defects, photoconductive decay, Photoluminescence Imaging, Quasisteady State
2014
Non-Contact High Precision Alternative to Hg-Probe for Dopant Profiling in SiC
Author
A. Czett, Cs. Buday, S. Savtchouk, D. Marinskiy
Topic
silicon carbide (SiC), corona-Kelvin measurement, mercury probe, doping profile
2014
Benefit of Combining Metrology Techniques for Thin SiGe:B Layers
Author
D. Le Cunff, T. Nguyen, R. Duru, F. Abbate, J. Hoglund, N. Laurent, F. Pernot, M. Wormington
Topic
Ge-Si alloys, boron, elemental semiconductors, semiconductor doping, semiconductor epitaxial layers
2014
Application of Non-Contact Corona-Kelvin Metrology for Characterization of PV Dielectrics on Textured Surfaces
Author
M. Wilson, Z. Hameiri, N. Nandakumar, S. Duttagupta
Topic
alumincorona, dielectric materials, passivation, silicon compounds, solar cells, surface texture
2014
On Determining the Optical Properties and Layer Structure from Spectroscopic Ellipsometric Data using Automated Artifact Minimization Method
Author
J. Budai, B. Farkas, Z.L. Horváth, Zs. Geretovszky
Topic
ellipsometry, modelling, Artifact minimization, Numerical inversion
2014
Experimental Study on the Role of Parameters Affecting Surface Recombination and Emitter Passivation
Author
M. Wilson, A. Findlay, J. D'Amico, A. Savtchouk, J. Lagowski, Z. Xu, R. Yang, T. Guo
Topic
aluminium compounds, elemental semiconductors, interface states, passivation, Silicon (Si), silicon compounds, solar cells, space charge, surface recombination
2014
Interface Traps at Intrinsic ia-Si:H/c-Si Interfaces
Author
A. Savtchouk, M. Wilson, P. Edelman, J. Lagowski, Z. Xu, R. Yang, T. Guo, C. Zhou, H. Diao, Y. Xiang, L. Zhao, W. Zhang
Topic
Interface Trap
2013
Spectroscopic Ellipsometry on Metal and Metal-Oxide Multilayer Hybrid Plasmonic Nanostructures
Author
A.A. Khosroabadi, P. Gangopadhyay, B. Cocilovo, L. Makai, P. Basa, B. Duong, J. Thomas, and R.A. Norwood
Topic
spectroscopic ellipsometry
2013
Comparison of Laser Textured Silicon Surfaces Prepared by Different Laser Sources
Author
Z. Tóth, A. Gárdián, M. Füle, J. Csontos, F. Korsós, P. Basa
Topic
Laser Processing, Silicon (Si), Texturisation
2013
Importance of Defect Photoionization in Silicon-Rich SiNx Dielectrics for High PID Resistance
Author
M. Wilson, A. Savthouck, J. D'Amico, J. Lagowski, S. Schmitt, A. Schneider, S. Olibet
Topic
deep levels, defect states, Dielectric thin films, infrared spectra, leakage currents, photoconductivity, photoionisation, refractive index, silicon compounds, stoichiometry, visible spectra
2013
Novel Approach to In-Line PL Imaging for Passivation Inspection of Silicon PV
Author
F. Korsós, Z. Kiss, G. Nádudvari, A. Zsovár, M. Wilson, P. Edelman, J. Lagowski, J. Chen, L. Zhao, C. Zhou, W. Wang, B. Wang
Topic
surface passivation, PL imaging, QSS-μPCD
2013
Advanced Interface Trap Metrology for Silicon PV
Author
J. D'Amico, M. Wilson, C. Almeida, J. Lagowski, S. Olibet
Topic
passivation, recombination, Silicon Nitride, Characterisation, Interface
2013
Application of Corona-Kelvin Metrology for Optimizing Surface Passivation: Dit, Surface Recombination and PID
Author
A. Savtchouk, M. Wilson, J. Lagowski, J. D’Amico, A. Findlay, P. Edelman
Topic
Corona-Kelvin Metrology, surface passivation, surface recombination
2013
Single Image Concept for Photoluminescence Based Emitter Saturation Current Imaging Using Direct Calibration by the QSS-μPCD Method
Author
F. Korsós, A. Zsóvár, J. Lagowski, M. Wilson, Z. Kiss, Z. Kovács, G. Nádudvari
Topic
elemental semiconductors, photoluminescence, Silicon (Si)
2013
Technique for Monitoring of PID Susceptibility and Interface Trap Density in Advanced Passivation Dielectrics
Author
M. Wilson, A. Findlay, J. Lagowski, J. D’Amico, A. Savtchouk
Topic
passivation dielectric, interface trap density, PID susceptibility
2013
Lifetime Measurements on Attached Epilayers and Detached Epifoils Grown on Reorganised Porous Silicon Showing a Bulk Lifetime Exceeding 100 μs
Author
H.S. Radhakrishnan, M. Debucquoy, F. Korsós, K. Van Nieuwenhuysen, V. Depauw, I. Gordon, R. Mertens, J. Poortmans
Topic
epilayer, bulk lifetime, porous silicon, surface recombination velocity, Microwave Photoconductive Decay (μ-PCD), QSSPC, PL, PC1D
2013
Noncontact Imaging of PID Susceptibility of Passivation Films and Monitoring of Relevant Dielectric Properties
Author
A. Findlay, M. Wilson, J. Lagowski, J. D’Amico, S. Savtchouk
Topic
PID susceptibility, Passivation Film, Relevant Dielectric Properties
2013
Unified Lifetime Metrology and Photoluminescence Imaging for Silicon PV
Author
M. Wilson, J. Lagowski, P. Edelman, F. Korsós, G. Nádudvari, Z. Kiss, J. Schmauder, V. Mihailetchi, S. Olibet
Topic
photoluminescence, emitter saturation current, lifetime
2013
Charging Behavior of Silicon Nitride Based Non-Volatile Memory Structures with Embedded Semiconductor Nanocrystals
Author
Zs.J. Horváth, P. Basa, T. Jászi, K.Z. Molnár, A.E. Pap, Gy. Molnár
Published

Applied Surface Science 269 (2013) 23– 28

Topic
2013
Influence of Precursor Gas Ratio and Firing on Silicon Surface Passivation by APCVD Aluminium Oxide
Author
K.O. Davis, K. Jiang, M. Wilson, C. Demberger, H. Zunft, H. Haverkamp, D. Habermann, W.V. Schoenfeld
Topic
atmospheric pressure CVD, Silicon (Si), passivation, aluminum oxide
2013
Kelvin Force Microscopy Characterization of Corona Charged Dielectric Surfaces
Author
D. Marinskiy, P. Edelman, A.D. Snider
Topic
Kelvin force microscopy, corona charge, concentration profile, surface diffusion
2013
Characterization of Residual Implant Damage by Generation Time Technique
Author
Y.J. Jee, C.Y. Kim, C.S. Jun, T.S. Kim, A. Belyaev, D. Marinskiy
Topic
Residual implant damage, Generation lifetime, Breakdown voltage, Doping measurements, surface photovoltage, Corona – Kelvin method
2013
Development of a-Si:H/c-Si Heterojunctions for the i2-Module Concept: Low-Temperature Passivation and Emitter Formation on Wafers Bonded to Glass
Author
J. Govaerts, S.N. Granata, T. Bearda, F. Dross, C. Boulord, G. Beaucarne, F. Korsós, K. Baert, I. Gordon, J. Poortmans
Topic
PECVD, Heterojunction, Silicone bonding, Module-level processing
2012
Unified Lifetime Measurement for Silicon PV
Author
M. Wilson, J. Lagowski, P. Edelman, A. Savtchouk, A. Findlay, S. Olibet, V. Mihailetchi
Topic
elemental semiconductors, reliability, Silicon (Si), solar cells
2012
Improved QSS-μPCD Measurement with Quality of Decay Control: Correlation with Steady-State Carrier Lifetime
Author
M. Wilson, P. Edelman, J. Lagowski, S. Olibet, V. Mihailetchi
Topic
Microwave Photoconductive Decay (μ-PCD), Steady-state lifetime, emitter saturation current
2012
Unification of Excess Carrier Lifetime Measurement for Silicon PV
Author
M. Wilson, A. Savtchouk, F. Korsós, G. Paráda, K. Kis-Szabo, V.D. Mihailetchi, S. Olibet
Topic
lifetime, passivation, field-effect
2012
State-of-the-art Surface Passivation of Boron Emitters using Inline PECVD AlOx/SiNx Stacks for Industrial High-Efficiency Silicon Wafer Solar Cells
Author
S. Duttagupta, Fen Lin, K.D. Shetty, M. Wilson, Fa-Jun Ma, Jiaji Lin, A.G. Aberle, B. Hoex
Topic
aluminium compounds, current density, elemental semiconductors, passivation, plasma CVD, short-circuit currents, Silicon (Si), silicon compounds, solar cells
2012
Recombination via Point Defects and their Complexes in Solar Silicon
Author
A.R. Peaker, V.P. Markevich, B. Hamilton, G. Parada, A. Dudás, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon, G. Rozgonyi
Topic
Laplace deep level transient spectroscopy, minority carrier lifetime, passivation, recombination, silicon solar cells, transition metals
2012
Charging Behaviour of MNOS Structures with Embedded Ge Nanocrystals
Author
Zs. J. Horváth, K. Zs. Molnár, Gy. Molnár, P. Basa, T. Jászi, A. E. Pap, R. Lovassy, P. Turmezei
Topic
MNOS structures, Ge nanocrytals, Oxide thickness
2012
Integrated Electrical and Optical Characterization of Large Area Thin Film Photovoltaic Materials
Author
G. Szitási, F. Korsós, D. Selmeczi, O. Takács, F. Novinics, P. Tüttő, A. Findlay, M. Wilson
Topic
eddy current testing, ellipsometry, fluorine, photoconducting materials, photovoltaic effects, spectroscopy, tin compounds
2012
High Resolution Mapping of Carrier Lifetime on Bulk PV Si Material by Dual Wavelength MW-PCD Method
Author
F. Korsós, B. Radics, E. Pihan, N. Plassat, B. Drevet, N. Laurent, A. Jouini
Published

On Conference Proceedings CD

Topic
2012
Photoluminescence Imaging of as-Cut Wafers Combined with Lifetime Calibration by MW-PCD Technique
Author
F. Korsós, J. Csontos, Z. Kiss, G. Nádudvari, P. Tüttő, Z. Tóth, M. Wilson
Topic
Wafer-Based Silicon Solar Cells, Microwave Photoconductive Decay (μ-PCD), Photoluminescence Imaging
2011
Lifetime Degradation in Dark Observed in Mono Crystalline Cz-Silicon
Author
J. Arumughan, J. Theobald, M. Wilson, L. Hildebrand, R. Petres, A. Savtchouk, R. Kopecek
Topic
c-Si, Degradation, Diffusion Length, lifetime
2011
QSS-μPCD Measurement of Lifetime in Silicon Wafers: Advantages and new Applications
Author
M. Wilson, A. Savtchouk, J. Lagowskia, K. Kis-Szabó, F. Korsós, A. Tóth, R. Kopecek, V.D. Mihailetchi
Topic
Microwave Photoconductive Decay (μ-PCD), J0, photovoltaics, lifetime
2011
Light Induced Degradation in Multicrystalline Solar Grade Silicon Solar Cells Evaluated Using Accelerated LID
Author
K. Peter, P. Preis, P.E. Díaz-Pérez, J. Theobald, E. Enebakk, A.-K. Soiland, A. Savtchouk, M. Wilson
Topic
Solar Grade Silicon, Light Induced Degradation (LID)
2011
Novel Noncontact Approach to Monitoring the Field-Effect Passivation of Emitters
Author
M.Wilson, A. Savtchouk, J. Lagowski, F. Korsós, A. Tóth, R. Kopecek, V.D. Mihailetchic, R. Petres, T. Boescke
Topic
emitter passivation, field-effect, J0, corona charge
2011
Multifunction Metrology Platform for Photovoltaics
Author
M. Wilson, J. D'Amico, A. Savtchouk, P. Edelman, A. Findlay, L. Jastrzebski, J. Lagowski, K. Kis-Szabó, F. Korsós, A. Tóth, A. Pap, R. Kopecek, K. Peter
Topic
electron traps, passivation, photovoltaic cells, semiconductor thin films, Silicon (Si)
2011
New µ-PCD Based Method for Sorting Boron and Gallium Doped Feedstock Material
Author
F. Korsós, G. Paráda, D. Fátay
Topic
Wafer-Based Silicon Solar Cells, Silicon Feedstock, Crystallisation, Wafering, Microwave Photoconductive Decay (μ-PCD), carrier lifetime
2011
Emitter Passivation by Charge Injection
Author
M. Wilson, J. Lagowski, A. Savtchouk, A. Findlay, L. Jastrzebski, S. Olibet, V.D. Mihailetchi
Topic
charge injection, corona, electron-hole recombination, interface states, passivation, solar cells, thin films, tunneling
2011
Monitoring of Incoming Silicon PV Wafers with Modified Surface Photovoltage (SPV) Minority Carrier Diffusion Length Method
Author
M. Wilson, A. Savtchouk, F. Buchholz, S. Olibet, R. Kopecek, K. Peter
Topic
Minority Carrier Diffusion Length, surface photovoltage, Incoming Wafers
2010
Implant Monitoring Measurements On Ultra Shallow Implants Before And After Anneal Using Photomodulated Reflection And Junction Photovoltage Measurement Techniques
Author
M. Tallián, A. Pap, K. Mocsár, A. Somogyi, Gy. Nádudvari, D. Kosztka, T. Pavelka
Topic
ultra-shallow junction (USJ), Photomodulated Reflection measurements
2010
Monitoring Ion Implantation Energy Using Non‐contact Characterization Methods
Author
M. Tallián, A. Pap, K. Mocsár, A. Somogyi, G. Nádudvari, D. Kosztka, T. Pavelka
Topic
ultra-shallow junction (USJ), extremely low ion implant energies, Photomodulated Reflection measurements
2010
Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance
Author
J-L. Everaert, E. Rosseel, A. Mészáros, K. Kis-Szabó, P. Tüttő, A. Pap, T. Pavelka, M. Wilson, A. Findlay, P. Edelman, J. Lagowski
Topic
noncontact method, mobility measurement, corona-voltage metrology, ac-surface photovoltage measurement, inversion layer sheet resistance
2010
Contactless Mobility Measurements of Inversion Charge Carriers on Silicon Substrates with SiO2 and HfO2 Gate Dielectrics
Author
J-L. Everaert, E. Rosseel, J. Dekoster, A. Pap, A. Mészáros, K. Kis-Szabó, T. Pavelka
Topic
Dielectrics, Carrier mobility, Charge carriers, Dielectric thin films, Metrology
2010
Accelerated Light-Induced Degradation (ALID) for Monitoring of Defects in PV Silicon Wafers and Solar Cells
Author
M. Wilson, P. Edelman, A. Savtchouk, J. D’Amico, A. Findlay, J. Lagowski
Topic
Silicon (Si), photovoltage, contamination, PV, defects, boron–oxygen dimer, full wafer mapping, light degradation, solar cells
2010
Impact of Laser Anneal Thermal Budget on the Quality of Thin SiGe Channels with a High Ge Content
Author
E. Rosseel, A. Hikavyy, J-L. Everaert, L. Witters, J. Mitard, T. Hoffmann, W. Vandervorst, A. Pap, T. Pavelka
Topic
Ge-Si alloys, X-ray diffraction, elemental semiconductors, laser beam annealing, semiconductor epitaxial layers, semiconductor junctions, Silicon (Si)
2010
Multicrystalline Solar Grade Silicon Solar Cells
Author
K. Peter, R. Kopecek, M. Wilson, J. Lagowski, E. Enebakk, A. Soiland, S. Grandum
Topic
Crystallisation, elemental semiconductors, solar cells
2009
Comparison of Silicon Surface Preparation Methods for Measurement of Minority Carrier Lifetime Using the Microwave Photoconductive Decay (µ-PCD) Coupled with Continuous Corona Charge (Charge-PCD)
Author
T. Pavelka, Á. Pap, P. Kenesei, M. Varga, F. Novinics, M. Tallián, G. Borionetti, G. Guaglio, M. Pfeffer, E. Don
Topic
Microwave Photoconductive Decay (μ-PCD), C-PCD, corona charge, carrier lifetime
2009
In‐line 90 nm Technology Gate Oxide Nitrogen Monitoring With Non‐Contact Electrical Technique
Author
N. Pic, G. Polisski, E. Paire, V. Rizzo, C. Grosjean, B. Bortolotti, J. D'Amico, N. Cabuil
Topic
oxynitrides, interface trapped charge, in-line monitoring, XPS, D-SIMS, RTP, Charge coupled devices, Ellipsometers, Nitridation, Surface charge, Surface oxidation
2009
Application Of The SPV-based Surface Lifetime Technique To In-Line Monitoring Of Surface Cu Contamination
Author
J. D’Amico, A. Savtchouk, M. Wilson, C.H. Kim, H.W. Yoo, C.H. Lee, T.K. Kim, S.H. Son
Topic
Copper (Cu), Surface Lifetime, surface photovoltage, Surface Contamination, Metrology, in-line monitoring, elemental semiconductors, Inductively coupled plasma, Integrated circuits
2009
Nanoindentation of Silicon
Author
P. M. Nagy, P. Horvath, G. Peto, E. Kalman
Topic
Atomic Force Microscope (AFM), Ion Implantation, nanoindentation, Phase Transformation of Si, Pile-Up, Pop-In, Surface Modification
2008
Ultra‐Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION® Followed by Laser Thermal Processing
Author
F. Torregrosa, H. Etienne, G. Sempere, G. Mathieu, L. Roux, V. Vervisch, P. Delaporte, T. Sarnet, A. Pap, K. Kis‐Szabó, T. Pavelka, C. Grosjean
Topic
plasma ion implantation, Ion Implantation, semiconductor junctions, annealing, boron
2008
Photoelectric Method for Non-Contact Characterization of SiGe
Author
E. Tsidilkovski, K. Steeples
Topic
Surface, photovoltage, Electronic properties, Strain, Multi-layer structure, Semiconductors, Characterisation
2008
Nanomechanical Properties of Ion-Implanted Si
Author
P.M. Nagy, D. Aranyi, P. Horváth, G. Pető, E. Kálmán
Topic
nanoindentation, Ion Implantation, mechanical properties, AFM
2008
Fabrication and Characterisation Challenges on Ultra Shallow Junctions for sub 45 nm CMOS Devices
Author
F. Torregrosa, H. Etienne, G. Sempere, G. Mathieu, L. Roux, C. Grosjean, R. Daineche, Y. De Puydt, L. Dupuy, P. Galand, A. Pap, K. Kis-Szabo, T. Pavelka
Topic
ultra-shallow junction (USJ)
2008
Determining of Sheet Resistance of Implanted Wafers with Technique of Non-Contact Junction Photovoltage Measurement
Author
-
Published

-

Topic
2008
Digital SPV Diffusion Length Metrology (E8-Fe) for Ultra-High Purity Silicon Wafers
Author
M. Wilson, A. Savtchouk, I. Tarasov, J. D’Amico, P. Edelman, N. Kochey, J. Lagowski
Topic
Minority Carrier Diffusion Length, surface photovoltage, iron detection in silicon wafers
2008
Control of Laser Induced Interface Traps with In-line Corona Charge Metrology
Author
J-L. Everaert, E. Rosseel, C. Ortolland, M. Aoulaiche, T. Hoffmann, T. Pavelka, E. Don
Topic
corona charge, in-line, traps
2008
Junction Photovoltage Metrology and High Resolution Mapping of Ion Implants Electrically Isolated from Wafer Surface
Author
F. Korsós, K. Kis-Szabó, E. Don, A. Pap, T. Pavelka, C. Laviron, M. Pfeffer
Topic
Metrology, annealing, Ion Implantation, active layer, doping
2008
Band Offset Diagnostics of Advanced Dielectrics
Author
P. Edelman, M. Wilson, J. D’Amico, A. Savtchouk, J. Lagowski
Topic
non-contact electrical metrology, Silicon (Si), mixed dielectrics, oxynitrides, hafnium silicates
2008
Ultra Shallow Junctions fabrication by Plasma Immersion Implantation on PULSION® followed by Spike and/or Flash Annealing. Effect of pre-amorphization and co-implantation on Boron diffusion in Silicon
Author
H. Etienne, F. Torregrosa, G. Semoere, G. Mathieu, L. Roux, F. Cristiano, P. Fazzini, W. Lerch, S. Paul, J. Gelpey, F. Milesi, F. Gonzatti, A. Pap, K. Kis-Szabo, T. Pavelka
Topic
amorphization, co-implantation, ultra-shallow junction (USJ), Hall effect measurements, SIMS, TEM
2007
Monitoring Plasma Nitridation of HfSiOx by Corona Charge Measurements
Author
J-L. Everaert, X. Shi, A. Rothschild, M. Schaekers, E. Rosseel, T. Pavelka, E. Don, S. Vanhaelemeersch
Topic
HfSiO, Nitridation, corona charge, Gate dielectric, Gate leakage
2007
Application of Non-contact Corona-Kelvin metrology for Characterization of Plasma Nitrided SiO2
Author
A. Belyaev, D. Marinskiy, M. Wilson, J. D’Amico, L. Jastrzebski, J. Lagowski
Topic
corona - Kelvin, scribe lines, plasma nitridation, Dielectrics, tunneling, Valence bands, Electric measurements, Metrology
2007
Three Dimensional Mapping of Thermal and Tunneling Electron Emission from InAs/GaAs Quantum Dots
Author
O. Engström, M.Kaniewska, W.Jung, M.Kaczmarczyk
Published

Appl.Phys.Letters 91, 033110 (published online 19 July 2007)

Topic
Deep level transient spectroscopy, quantum dots, tunneling, conduction bands, electric field
2007
Manifestation of Cu Impurities on Silicon Surfaces, Implication for Monitoring Cu Contamination
Author
M. Wilson, A. Savtchouk, J. D’Amico, I. Tarasov, L. Jastrzebski, J. Lagowski
Topic
Copper (Cu), Contact Potential Difference (CPD), ac-surface photovoltage measurement
2007
NIST Traceable Small Signal Surface Photo Voltage Reference Wafer
Author
A. Bertuch, K. Steeples
Topic
NIST traceable, surface photovoltage, standard, reference wafer, Electric measurements, Electrical resistivity, Metrology, Epitaxy, Silicon (Si)
2007
Real‐Time, High Resolution, Dynamic Surface Charge Wafer Mapping for Advanced Ion Implant Process Control
Author
K. Gurcan, A. Bertuch, K. Steeples
Topic
micro-uniformity, Metrology, implant, surface photovoltage, high-resolution mapping, electrical test, Ion Implantation, Surface charge, Testing procedures, Critical currents
2007
Determination of Activated Dopant Profiles with a Novel FastGate® Probe
Author
R.J. Hillard, C. Win Ye, M.C. Benjamin, K. Suguro
Topic
probes, Electrical resistance measurement, Testing, Solid state circuits, MOSFETs, annealing, Shape, Contacts, Capacitance-voltage characteristics, Charge carrier density
2007
Non-Contact Photoelectric Method For Thin SOI Characterization
Author
E. Tsidilkovski, K. Steeples
Topic
Non-contact, photoelectric measurement, silicon film thickness, SOI
2007
Implant Metrology for Bonded SOI Wafers using a Surface Photo-Voltage Technique
Author
A. Bertuch, W. Smith, K. Steeples, R. Standley, A. Stefanescu, R. Johnson
Topic
surface photovoltage, monitor, Ion Implantation, layer-transfer, SOI, wafer mapping, hydrogen and helium implants
2007
Determination of Implant Activation and Junction Leakage with a Non-Penetrating and Non-Damaging Elastic Material Probe (EM-Probe)
Author
R.J. Hillard, M. Benjamin, J.O. Borland
Published

International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT-2007), May 6 - 9, 2007, Napa, California

Topic
implant activation, junction leakage, implant, activation, leakage, junction
2007
Carrier Lifetime Measurements in Silicon for Photovoltaic Applications
Author
T. Pavelka, A. Pap, Gy. Szilágyi
Topic
lifetime, Silicon (Si), photovoltaics
2007
Determination of Activated Dopant Profiles with a Novel FastGate® Probe
Author
R.J. Hillard, C. Win Ye, M.C. Benjamin, K. Suguro
Topic
doping profile, probes, semiconductor junctions
2007
Improvements to High Resolution Mapping of Junction Photovoltage Measured Sheet Resistance by Correcting for Wafer Edge and Compensating for Junction Leakage
Author
E. Don, C. Kohn, A. Pap, P. Tüttő, T. Pavelka, C. Laviron, C. Wyon, R. Oechsner, M. Pfeffer
Published

6-9 May 2007 at INSIGHT 2007 Conference, Napa Valley, USA

Topic
2007
High Resolution Mapping of Sheet Resistance Reveal Implanter or Anneal Non-Uniformities
Author
C. Kohn, E. Don, P. Tüttő, A. Pap, T. Pavelka
Topic
sheet resistance, ultra shallow implants, junction photovoltage technique
2007
Metrology, Analysis and Charaterization in Micro- and Nanotechnologies - A European Challenge
Author
L. Pfitzner, A. Nutsch, R. Oechsner, M. Pfeffer, E. Don, C. Wylon, M. Hurlebaus
Topic
Metrology, semiconductor manufacturing, equipment
2007
In-Line Non-Contact Micro-Kelvin Measurements Applied to ZrO2/Al2O3/ZrO2 Dielectric Stacks in the Active Capacitor Cell Areas of Advanced DRAM
Author
J.H. Kim, C.H. Kim, H.W. Yoo, H.L. Kim, S.H. Son, C.H. Lee, T.K. Kim, J. D’Amico, M. Wilson, M. Wilson, S.H. Kim, S.H. Park
Topic
corona - Kelvin, DRAM production wafers, SASS, ZAZ dielectric
2007
Non-Contact SPV-based Method for Advanced Ion Implant Process Control
Author
F. Pennella, P. Pianezza, E. Tsidikovski, G. Krzych, K. Steeples
Topic
CMOS integrated circuits, annealing, Ion Implantation, photovoltaic effects, process control, semiconductor device manufacturing, semiconductor device measurement, voltage measurement, carrier lifetime
2006
45 nm Node p+ USJ Formation With High Dopant Activation And Low Damage
Author
J. Borland, S. Shishiguchi, A. Mineji, W. Krull, D. Jacobson, M. Tanjyo, W. Lerch, S. Paul, J. Gelpey, S. McCoy, J. Venturini, M. Current, V. Faifer, R. Hillard, M. Benjamin, T. Walker, A. Buczkowski, Z. Li, J. Chen
Topic
boron, boron compounds, elemental semiconductors, Ion Implantation, laser beam annealing, semiconductor doping, semiconductor junctions, Silicon (Si), solid phase epitaxial growth
2006
Metrology and High Resolution Mapping of Shallow Junctions Formed by Low Energy Implant Processes
Author
E. Don, A. Pap, T. Pavelka, P. Tüttő, C. Wyon, C. Laviron, R. Oechsner, M. Pfeffer
Topic
annealing, Electrical resistivity, Metrology, Spatial resolution
2006
Carrier Lifetime Mapping and Lifetime Studies of 4H-SiC Epilayers
Author
J.D. Caldwell, P. B. Klein, O. Glembocki, K. Hobart, F. Kub, A. Pap, T. Pavelka, A. Shrivastava, Z. Zhang, T. Sudarshan, G. Webster
Topic
carrier lifetime, silicon carbide (SiC), epilayer
2006
Photoelectric Measurement Method For Implanted Silicon: A Phenomenological Approach
Author
K. Steeples, E. Tsidilkovski
Topic
Silicon (Si), Metrology, photovoltage, defects, lifetime
2006
Surface Charge Profiling — An advancement in Ion Implant Monitoring
Author
C. Krueger, C.H. Ng, Z. Zhao, G. Krytsch
Topic
Ion Implantation, Surface charge, High current technology
2005
Making Use of Silicon Wafers with Low Lifetimes by Adequate POCl3 Diffusion
Author
J. Lossen, L. Mittelstadt, S. Dauwe, K. Lauer, C. Beneking
Topic
carrier lifetime, POCl3, diffusion
2005
Determination of electrically Active Surface Dopant Density in Ultra-Shallow Junction (USJ) Structures with a Non-Destructive Elastic Material Probe (EM-Probe)
Author
R.J. Hillard, M.V. Benjamin, W.C. Ye, J.O. Borland
Published

Ultra Shallow Junctions 2005, Daytona Beach, Florida

Topic
surface dopant density, ultra-shallow junction (USJ), elastic material probe
2005
Recent Developments in Electrical Metrology for MOS Fabrication
Author
R.J. Hillard, M.C. Benjamin, G.A. Brown
Topic
Metrology, MOS
2005
Microwave Photoconductive Decay Mapping and Investigation of Lifetimes in 4H-SiC Epitaxial Layers
Author
J.D. Caldwell, A. Pap, A. Shrivastava, Z. Zhang, P.B. Klein, T. Pavelka, T. Sudarshan, O.J. Glembocki, K. Hobart, F. Kub
Published

Presented at Int. Conf. on Silicon Carbide and Related Materials (ICSCRM 2005), Pittsburgh, USA

Topic
silicon carbide (SiC), photoconductive decay, epitaxial layer
2005
Ultra Low Energy (ULE) Implant Dose & Activation Monitoring
Author
J. Borland, R. Hillard, M. Benjamin, E. Gurer
Topic
implant dose, activation monitoring, implant, activation
2005
Non-Contact Charge-Voltage Method for Dielectric Characterization on Small Test Areas of IC Product Wafers
Author
P. Edelman, D. Marinskiy, C. Almeida, J.N. Kochey, A. Byelyayev, M. Wilson, A. Savtchouk, J. D’Amico, A. Findlay, L. Jastrzebski, J. Lagowski
Topic
Non-contact, CV, Scribe line testing, Advanced dielectrics, corona discharge, Kelvin force
2005
Quantitative Copper Measurement in Oxidized p-Type Silicon Wafers using Microwave Photoconductivity Decay
Author
H. Vainola, E. Saarnilehto, M. Yli-Koski, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka
Topic
Copper (Cu), illumination, precipitation, Silicon (Si), annealing
2005
Measurement of Copper in p-Type Silicon using Charge-Carrier Lifetime Methods
Author
M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka
Topic
Copper (Cu), Silicon (Si), surface photovoltage, Microwave Photoconductive Decay (μ-PCD)
2004
First Results of the Solarcentre Erfurt - a New Pertner in Photovoltaic Research
Author
S. Dauwe, L. Mittelstadt, A. Lawerenz, H.J. Freitag,C. Beneking, H. Aulich
Topic
Fourier transform infrared spectroscopy, Microwave-induced photoconductance decay, Light beam induced current mapping, Spectral Response
2004
Measurements of Ultra-Shallow Junction (USJ) Sheet Resistance with a Non-Penetrating Four Point Probe
Author
R.J. Hillard, R.G. Mazur, W.J. Alexander, C. Win Ye, M.C. Benjamin, J.O. Borland
Topic
sheet resistance, 4pp, ultra-shallow junction (USJ)
2004
Accurate Determination of Ultra-Shallow Junction Sheet Resistance with a Non-Penetrating Four Point Probe
Author
R.J. Hillard, J. Borland, C. Win Ye
Topic
sheet resistance, 4pp, ultra-shallow junction (USJ)
2004
Accurate Determination of Ultra-Shallow Junction Sheet Resistance with a Non-Penetrating Four Point Probe
Author
R.J. Hillard, C. Win Ye, L. Tan, M.C. Benjamin, R.G. Mazur
Topic
sheet resistance, 4pp, ultra-shallow junction (USJ)
2004
Investigation of High-K Dielectric Properties with the Non-Contact SASS Technique
Author
M. Wilson, J. Lagowski, J. D'Amico, P. Edelman, A. Savtchouk
Topic
High dielectric constant materials, Materials science, High-k gate dielectrics
2004
Mapping of Minority Carrier Diffusion Length and Heavy Metal Contamination with Ultimate Surface Photovoltage Method
Author
J. Lagowski, A. Aleynikov, A. Savtchouk, P. Edelman
Topic
surface photovoltage, Minority Carrier Diffusion Length
2004
Non-Contact C-V Measurements of Ultra Thin Dielectrics
Author
P. Edelman, A. Savtchouk, M. Wilson, J. D'Amico, J.N. Kochey, D. Marinskiy, J. Lagowski
Topic
non-contact C-V, ultra-thin dielectrics, Silicon (Si)
2004
Ion Implant Process Monitoring with a Dynamic Surface Photo-Charge Technique
Author
E. Tsidilkovski, K. Crocker, K. Steeples
Topic
CMOS integrated circuits, arsenic, boron, Ion Implantation, process monitoring, surface photovoltage
2003
Improvements in PV Performance and Yield (INSPIRE) Report of a Project Carried out Under the DTI's New and Renewable Energy Programme
Author
B.J. Garrard
Published

DTI New and Renewable Energy Programme

Topic
cruicible hot filling, growth of large ingots, recycling of silicon ingots
2003
Comparative Study on Emitter Sheet Resitivity Measurements for Inline Quality Control
Author
E. Rüland, P. Fath, T. Pavelka, A. Pap, K. Peter, J. Mizsei
Topic
diffusion, eddy current testing, Electrical resistivity, elemental semiconductors, phosphorus, quality control, Silicon (Si), solar cells, surface photovoltage
2003
Non-contact Doping Profiling in Epitaxial SiC
Author
A. Savtchouk, E. Oborina, A.M. Hoff, J. Lagowski
Topic
doping, Non-Contact Measurement, silicon carbide (SiC)
2003
In‐line, Non‐destructive Electrical Metrology of Nitrided Silicon Dioxide and High‐k Gate Dielectric Layers
Author
R.J. Hillard, P.Y. Hung, W. Chism, C.W. Ye, W.H. Howland, L.C. Tan, C.E. Kalnas
Topic
Dielectrics, Dielectric thin films, Electrical properties, Elasticity, Dielectric properties
2003
Non-Contact Electrical Doping Profiling
Author
D. Marinskiy, J. Lagowski, J. D’Amico, A. Findlay, L. Jastrzebski
Topic
doping, Mercury (element), Capacitance, Electric measurements, Semiconductor surfaces
2003
Non‐Contact C‐V Technique for high‐k Applications
Author
P. Edelman, A. Savtchouk, M. Wilson, J. D’Amico, J.N. Kochey, D. Marinskiy, J. Lagowski
Topic
Dielectrics, Adsorption, Capacitance, Contact potential, Metal insulator semiconductor structures
2003
Silicon Epitaxial Layer Recombination and Generation Lifetime Characterization
Author
D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, J. Benton
Topic
MOS capacitors, carrier lifetime, electron-hole recombination, semiconductor device measurement, semiconductor epitaxial layers, Silicon (Si), space-charge limited conduction
2003
Determination of Metallic Impurities in a Silicon Wafer by Local Etching and Electrothermal Atomic Absorption Spectrometry
Author
H-Y. Chung, S-H Lee, Y-H. Kim, K-S. Lee, D-H. Kim
Topic
metallic impurities distribution, etching technique, ET-AAS
2002
Full Wafer Non-Contact Mapping of Electrical Properties of Ultra-Thin Advanced Dielectrics on Si
Author
P. Edelman, J. Lagowski, A. Savtchouk, M. Wilson, A. Aleynikov, D. Marinskiy, J. Navarro
Topic
Dielectrics, leakage, Oxide thickness, Non-contact, Mapping, corona
2002
Product Wafer Monitoring of Ultra-Shallow Channel Implants with an Elastic Metal Gate (EM-gate)
Author
R.J. Hillard, W.H. Howland, R.G. Mazur, W. Ye, N.K. Variam
Topic
MOSFET, carrier density, doping profile, Ion Implantation, process monitoring, semiconductor device measurement
2002
Cleaning of Si Surfaces by Lamp Illumination
Author
A. Danel, C.L. Tsai, K. Shanmugasundaram, F. Tardif, E. Kamieniecki, J. Ruzyllo
Topic
Lamp cleaning, Organic contamination, Volatile contaminants, hydrocarbons
2002
Contactless Surface Charge Semiconductor Characterization
Author
D.K. Schröder
Topic
Silicon (Si), Electric measurements, Metal–insulator–semiconductor structures, Surface and interface states, Contact potential, Work function, Epitaxial silicon
2002
Detection of Low-Level Copper Contamination in p-Type Silicon by Means of Microwave Photoconductive Decay Measurements
Author
M. Yil-Koski, M. Palokangas, A. Haarahiltunen, H. Vainöla, J. Storgards, H. Holmberg, J. Sinkkonen
Topic
recombination of copper, Microwave Photoconductive Decay (μ-PCD), high-intensity bias light, interstitial copper, Ham's kinetics, Si–SiO2 interface
2001
Reflection Mode Scanning Infrared Microscope (SIRM) and its Applications to Defect Detection in Silicon (Scanning Infrared Microscope and Its Application in Silicon)
Author
Cs. Kovacsics
Topic
2001
SPV Monitoring of Near Surface Doping – Role of Boron-Hydrogen Interaction; Boron Passivation and Reactivation
Author
D. Marinskiy, J. Lagowski
Topic
Hydrogen, passivation, boron acceptor, wet etching, reactive ion etching, sputter deposition, metal contacts, Ar ion beam etching
2001
Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment
Author
H. Takato, I. Sakata, R. Shimokawa
Topic
surface passivation, quinhydrone/ethanol treatment, Microwave Photoconductive Decay (μ-PCD)
2001
Non Contact Surface Potential Measurements for Charging Reduction During Manufacturing of Metal-Insulator-Metal Capacitors
Author
J. Ackaert, Z. Wang, E. De Backer, P. Colson, P. Coppens
Topic
charging induced damage (CID), metal-insulator-metal-capacitor (MIMC)
2001
Carrier Lifetime Analysis by Photoconductive Decay and Free Carrier Absorption Measurements
Author
H-J. Schulze, A. Frohnmeyer, F.-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka
Topic
Silicon (Si), elemental semiconductors, carrier lifetime, photoconductivity
2001
Process Induced Oxide and Interface Charges and their Reactivity with Carriers in Bulk Silicon
Author
J.E. Steinle
Published

TI Technical Journal, Engineering Technology, 2001

Topic
lifetime measurements, metal contamination, crystal defects, modified techniques, oxide quality
2000
COCOS (Corona Oxide Characterization of Semiconductor) Non-Contact Metrology for Gate Dielectrics
Author
M. Wilson, J. Lagowski, L. Jastrzebski, A. Savtchouk, V. Faifer
Topic
COCOS, Dielectrics, Semiconductor device characterization, Dielectric thin films, Electric measurements, Contact potential
2000
Non-contact Thickness and Electrical Characterization of High-k Dielectrics
Author
A.F. Bello, S. Kher, D. Marinskiy
Topic
high-k dielectrics, BST, picosecond ultrasonics, COCOS, Electric measurements, Capacitance, Dielectric constant, Dielectric thin films
2000
Small Signal ac-Surface Photovoltage Technique for Non-Contact Monitoring of Near Surface Doping for IC-processing
Author
D. Marinskiy, J. Lagowski, M. Wilson, L. Jastrzebski, R. Santiesteban, K. Elshot
Topic
surface photovoltage, surface doping, Ion Implantation, doping, Electrodes, Oxides, Reflectivity, Silicon (Si), Capacitance, Diagnostics
2000
Non-contact, In-line Monitoring of Low Dose and Low Energy Ion Implantation
Author
R.S. Santiesteban, D.K. DeBusk, D.A. Ramappa, W.M. Moller
Topic
boron, doping profile, elemental semiconductors, Ion Implantation, process monitoring, Silicon (Si), surface photovoltage
2000
Qualification of Epi Layers and Interface Properties by an Improved µ-PCD Technique
Author
T. Pavelka, D.C. Gupta and G.A. Brown
Topic
Silicon (Si), epitaxial wafer, carrier lifetime, surface/interface recombination velocity
2000
Investigation of Deep Levels and Precipitates Related to Molybdenum in Silicon by DLTS and Scanning Infrared Microscopy
Author
B. Sandhu, T. Ogikubo, H. Goto, V. Csapó, T. Pavelka
Topic
DLTS, SIRM, Silicon (Si), Mo, Fe, deep levels, carrier lifetime
2000
Analytical Tools for the Characterization of Power Devices
Author
H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, B. Simmnacher, B.O. Kolbesen, P. Tüttő, T. Pavelka, G. Wachutka
Topic
transition metals, contamination, carrier lifetime, silicon defect density
2000
Carrier Lifetime Control and Characterization of High-Resistivity Silicon Used for High-Power Devices
Author
H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka
Topic
carrier lifetime, Silicon (Si), high power device
2000
Lifetime mapping of Si Wafers by an Infrared Camera
Author
M. Bail, J. Kentsch, R. Brendel, M. Schulz
Topic
carrier lifetime, infrared camera
2000
Relationship Between Yield and Reliability Impact of Plasma Damage to Gate Oxide
Author
P.W. Mason, D.K. DeBusk, J.K. McDaniel, A.S. Oates, K.P. Cheung
Topic
integrated circuit reliability, integrated circuit yield, Plasma materials processing
2000
Low-Cost High Efficient Milticrystalline Silicon for Photovoltaics
Author
M.B.I. Diaz, C. Haessler
Published

Proceedings of the 6th energie "Marie-Curie" Research Training Fellowship Conference, Paris, May, 2000.

Topic
1999
COCOS (Corona Oxide Characterization of Semiconductor) Metrology: Physical Principles and Applications
Author
M. Wilson, J. Lagowski, A. Savtchouk, L. Jastrzebski, J. D'Amico
Topic
COCOS, corona, Interface Trap, stress induced leakage current, iron contamination, Contact Potential Difference (CPD)
1999
New COCOS (Corona Oxide Characterization of Semiconductor) Method for Monitoring the Reliability of Thin Gate Oxides
Author
M. Wilson, J. Lagowski, A. Savtchouk, L. Jastrebski, J. D'Amico, D.K. DeBusk, A. Buczkowski
Topic
COCOS, Interface structure, surface treatment, Corona effect, Voltage current curve, reliability, Oxide layer, Defect detection, Comparative study, Experimental result, Waveform
1999
Using the Surface Charge Profiler for In-Line Monitoring of Doping Concentration in Silicon Epitaxial Wafer Manufacturing
Author
J.P. Tower, E. Kamieniecki, M.C. Nguyen, A. Danel
Topic
doping, Silicon (Si), Wafer manufacturing, Epitaxy
1999
Determination of Recombination Center Parameters by the Combined Application of µ-PCD and SPV Techniques
Author
T. Pavelka, A. Tóth, G. Bayer
Topic
recombination center, Microwave Photoconductive Decay (μ-PCD), surface photovoltage
1999
Temperature Dependence of Carrier Recombination Lifetimes in n-Type Silicon
Author
A. Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze, P. Tüttő, T. Pavelka, G. Wachutka
Published

Proceedings of the International Semiconductor Device Research Symposium (Charlottesville 1999), pp. 539-542

Topic
1999
Fast Noncontact Diffusion-Process Monitoring
Author
D.K. DeBusk, A.M. Hoff
Topic
noncontact metrology, surface photovoltage, Contact Potential Difference (CPD), COCOS
1999
Detection of Copper Contamination in Silicon by Surface Photovoltage Diffusion Length Measurements
Author
W.B. Henley, D.A. Ramappa, L. Jastrezbski
Topic
Copper (Cu), Silicon (Si), diffusion, carrier lifetime, iron
1999
Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing
Author
M. Yli-Koski, J. Mellin, V. Ovchinnikov
Topic
Gettering, Phosphorous Ion Implantation, Silicon (Si), surface photovoltage
1999
A Novel Pretreatment for Thin-Film Measurements
Author
A. Danel, F. Tardif, E. Kamieniecki
Topic
Rapid Optical Surface Treatment (ROST), hydrocarbons, ellipsometry
1999
Evaluation of Precipitation and Denuded Zone Depth on Different Silicon Materials
Author
J.E. Steinle
Published

TI Technical Journal, Engineering Technology, April-June, 1999

Topic
1999
Effects of Copper Contamination in Silicon on Thin Oxide Breakdown
Author
D.A. Ramappa, W.B. Henley
Topic
copper contamination, breakdown, reliability, thin silicon gate oxide
1999
Diffusion of Iron in Silicon Dioxide
Author
D.A. Ramappa, W.B. Henley
Topic
diffusion, iron, silicon dioxide
1999
Evaluation of Advanced Pre-Gate Cleanings
Author
C. Cowache, P. Boelen, I. Kashkoush, P Besson, F. Tardif
Topic
pre-gate cleaning, particle removal, metal removal, surface microroughness, surface passivation
1999
Epilayer Quality and Yield Improvement Using the Surface Charge Profiler as a Non-Destructive Diagnostic Technique
Author
M.C. Nguyen, J.P. Tower, A. Danel
Topic
semiconductor materials
1999
Small Signal AC-Surface Photovoltage Technique for Non-Contact Monitoring of Near Surface Doping and Recombination-Generation in the Depletion Layer
Author
D. Marinskiy, J. Lagowski, M. Wilson, A. Savtchouk, L. Jastrzebski, D. DeBusk
Topic
Small signal non-contact ac-SPV, near surface doping (NSD), chopping frequency, submicron penetration depth
1998
Use of Non-Contact Resistivity Measurements for Epitaxy: Surface Charge Profiler Method
Author
A. Danel, F. Tardif, G. Kamarinos, M.C. Nguyen
Topic
high purity silicon, Surface Charge Profiler (SCP), Doping measurements
1998
Surface Dopant Concentration Measurement using the Surface Charge Profiler (SCP) Method: Characterization of Hydrogen and Metallic Contamination in Silicon
Author
A. Danel, F. Tardif, G. Kamarinos
Topic
Doping deactivation, Surface Charge Profiler (SCP), Boron-doped silicon, Hydrogen, Copper (Cu)
1998
Present Status of the Surface Photovoltage Method (SPV) for Measuring Minority Carrier Diffusion Length and Related Parameters
Author
P. Edelman, V. Faifer, J. Lagowski
Topic
surface photovoltage, Minority Carrier Diffusion Length, iron contamination, recombination lifetime
1998
Problems and Possibilities of Comparing Different Lifetime Measuring Instruments and Techniques
Author
T. Pavelka, D.C. Gupta, F.R. Bacher, W.M. Hughes
Topic
carrier lifetime, surface photovoltage, Microwave Photoconductive Decay (μ-PCD), injection level, surface recombination, surface passivation
1998
Contamination Reduction and Control in Integrated Circiut Manufacturing
Author
J.E. Steinle
Published

TI Technical Journal, Engineering Quality, April-June, 1998

Topic
1997
Process Monitoring of Ultrathin Oxides using Surface Charge Analysis
Author
A.H. Field
Topic
surface charge analysis, VQ, Oxides, contamination, doping, Integrated circuits, Interfaces
1997
Charge Carrier Lifetime Modification in Silicon by High Energy H+, He+ Ion Implantation
Author
N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L.P. Bíró, F. Pászti, T. Mohácsy, Cs. Kovacsics, A. Manuaba, J. Gyulai
Topic
Charge Carrier Lifetime, Excess Charge Pocket, Ion Implantation, Lifetime Tailoring, Microwave Photoconductive Decay (μ-PCD), Radiation Damage, Recombination Activity
1997
Charge Carrier Lifetime Modification in Silicon by High Energy H+ or He+ Ion
Author
N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L.P. Bíró, A. Manuaba, J. Gyulai
Topic
carrier lifetime, Silicon (Si), Ion Implantation
1997
Correlation Of Nitride Spacer Plasma Damage Results From Conventional Gate Capacitor Electrical Tests And A New, Non-contact Approach
Author
M.W. Goss, A. Findlay
Topic
Capacitors, etching, Plasma applications, Plasma devices, Plasma diagnostics, Plasma materials processing, Plasma measurements, Plasma stability, Pulse measurements, Testing
1997
Monitoring of Mobile Sodium Ions in SiO2 Using Corona Charging
Author
F.A. Stevie, E. Persson, D.K. DeBusk, A. Savchuk, A.M. Hoff, P. Edelman, J. Lagowski
Topic
mobil charge, corona temperature stress, SiO2, corona charge
1997
Monitoring of Noble Metals in HF Based Chemistries by u-PCD, SPV, SCI and SCP
Author
A. Daniel, U. Straube, G. Kamarinos, E. Kamieniecki, F. Tradif
Topic
Microwave Photoconductive Decay (μ-PCD), surface photovoltage, SCI, SCP, noble metal
1996
Identification Possibility of Metallic Impurities in p-Type Silicon by Lifetime Measurement
Author
T.S. Horányi, P. Tüttő, Cs. Kovacsics
Topic
oxidation, Silicon (Si), temperature, nitrogen compounds, oxygen compounds, quartz, surface treatment
1996
New Possibilities for the Microwave Photoconductive Decay Technique
Author
T. Pavelka
Published

Semiconductor Fabtech, 4th Edition, 247-249

Topic
Microwave Photoconductive Decay (μ-PCD)
1996
Monitoring Plasma Damage: A Real-Time, Noncontact Approach
Author
A.M. Hoff, T.C. Esry, K. Nauka
Topic
plasma damage, dielectric charge, Radiation Damage, heavy metal contamination
1996
A Novel Method For Studying Degradation Related To Plasma Processing Of Silicon Wafers
Author
J. Lagowski, A. Hofl, L. Jastrzebski, P. Edelman, T. Esry
Topic
oxide potential, surface photovoltage, plasma damage, dielectric charge, Radiation Damage, heavy metal contamination
1995
Monitoring of Fe Contamination on Si Surfaces Using Non-Contact Surface Charge Profiler
Author
P. Roman, I. Kashkoush, R.E. Novak, E. Kamieniecki, J. Ruzyllo
Topic
Surface Charge Profiler (SCP), Fe concentration, Si surfaces, Non-Contact Measurement
1995
New Surface Photovoltage (SPV) Method for High Precision Measurement of the Minority Carrier Diffusion Length and Surface Recombination Velocity in Silicon Wafers
Author
V. Faifer, P. Edelman, A. Kontkiewicz, J. Lagowski, A. Hoff, V. Dyukov, A. Pravdivtsev, I. Kornienko
Topic
surface photovoltage, Minority Carrier Diffusion Length, surface recombination velocity, Silicon (Si)
1995
Element Specific Diagnosis Using Microwave Reflection Photoconductive Decay
Author
L. Köster, P. Blöchl, L. Fábry
Topic
element specific drive-in treatments, Microwave Photoconductive Decay (μ-PCD), metal contamination, injection level, Schockley-Read-Hall-recombination model
1993
Electrochemical Etching and Profiling of Silicon
Author
T.S. Horányi, P. Tüttő
Topic
etching, profiling, Silicon (Si)
1993
In Situ Bulk Lifetime Measurement on Silicon with a Chemically Passivated Surface
Author
T.S. Horányi, T. Pavelka, P. Tüttő
Topic
lifetime, Silicon (Si), passivated surface
1993
Investigation of Recombination Properties of Ti Double Donor in Silicon
Author
G. Ferenczi, T. Pavelka, P. Tüttő, L. Köster
Topic
recombination, Ti donor, Silicon (Si)
1993
Method for the Measurement of Long Minority Carrier Diffusion Lengths Exceeding Wafer Thickness
Author
J. Lagowski, A.M. Kontkiewicz, L. Jastrzebski, P. Edelman
Topic
diffusion, Silicon (Si), Surface measurement
1993
Iron Detection in the Part per Quadrillion Range in Silicon Using Surface Photovoltage and Photodissociation of Iron‐Boron Pairs
Author
J. Lagowski, P. Edelman, A.M. Kontkiewicz, O. Milic, W. Henley, M. Dexter, L. Jastrzebski, A.M. Hoff
Topic
iron, dissociation, photodissociation, Silicon (Si), diffusion
1993
Monitoring of Heavy Metal Contamination During Chemical Cleaning with Surface Photovoltage
Author
L. Jastrzebski, O. Milic, M. Dexter, J. Lagowski, D. DeBusk, K. Nauka, R. Witowski, M. Gordon, E. Persson
Topic
contamination, chemical analysis, photovoltaic cells, surface dynamics, integrated circuit design
1993
A New Method for Simultaneous Characterisation of Process Cleanliness and True Particle Removal Efficiency
Author
N.E. Henelius, H. Ronkainen, O.J. Anttila, J.M. Molarius
Topic
cleaning technology, semiconductor device manufacturing, electrochemical, electronics, dielectric science
1993
Ballistic Electron Emission Microscopy of Schottky Diodes on RF-Plasma-Treated Silicon
Author
L. Quattropani, K. Solt, P. Niedermann, I. Maggio-Aprile, O. Fischer, T. Pavelka
Topic
Schottky diode, RF plasma treated silicon
1991
Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon
Author
G. Ferenczi, T. Pavelka, P. Tüttő
Topic
contamination analysis, Silicon (Si)
1991
Improved Method for Depth Profiling of Multilayer Structures
Author
T.S. Horányi, P. Tüttő, G. Endrédi
Topic
depth profile, multilayer structure
1991
Electrochemical Method for the Measurement of Doping Profiles in Silicon
Author
T.S. Horányi, P. Tüttő, G. Endrédi
Topic
doping profile, Silicon (Si)
1990
DLTS Investigation of Deep Levels in Bulk GaAs under Uniaxial Stress
Author
C.A. Londos, T. Pavelka
Topic
DLTS, GaAs
1989
Temperature Dependence of the Capture Cross Section of Seo as Measured by Microwave Absorption Spectroscopy (MAS)
Author
T. Pavelka and B. Hemm
Topic
Microwave Absorption Spectroscopy
1989
Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps
Author
T. Pavelka and G. Ferenczi
Topic
Thermal emission, deep trap
1989
Dispersive Microwave Transient Spectroscopy of Deep Levels in Semiconductors
Author
D. Huber, P. Eichinger, G. Ferenczi, T. Pavelka, G. Veszely
Topic
Microwave transient spectroscopy, deep levels, semiconductor