News

Conference homepage: nPVworkshop

Expo homepage: International Green Energy Expo Korea

Hall/Booth: A-810

Determination of film uniformity and mechanical strength are important factors in engineering porous low-k materials in the field of interconnection technology. Such layers, especially in porous form, challenge to be optimized both for low density and mechanically strong structure. Integration in the device preparation process requires the layer to be stable as a function of temperature, ie., no thickness or composition change is allowed during high temperature process steps. Such important factor is the uniaxial CTE (Coefficient of Thermal Expansion) which measures the layer thickness change with temperature. In case of an interconnect multilayer structure, each composing material should be compatible in terms of thermal expansion in order to avoid any mechanical interferences, eg., cracks or delamination. CTE of low-k materials is reported to be significantly higher than that of other materials in the same structure which leads to mechanism for stress formation in the structure. Thus, lowering of thick porous low-k CTE is essential to reach closer value to that of Cu (50-60 vs. 17 ppm/°C) for high-temperature process.

Conference homepage: Semicon China 2013
Hall N, Booth # 2543