SIRM-300

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SIRM-300 Scanning Infrared Microscope

The SIRM-300 Scanning Infrared Microscope is a non-contact, non-destructive, optical instrument, which provides a complete characterization of bulk micro defects (BMDs) such as oxide and metal precipitates, stacking faults, dislocations, slip lines and voids in bulk silicon and in the denuded zone (DZ). GaAs and InP semiconductor materials can also be measured by the SIRM-300. Since reflective confocal scanning microscopy is used, the specimen can be a standard, one side polished wafer.

Key Features

  • Non-contact, non-destructive analysis
  • No sample preparation is needed
  • 10 nm minimum detectable particle size
  • Measurable defect density: 105-109 cm-3
  • Image collection in X-Y and X-Z planes
  • Measurement of epi wafers
  • 300 mm measurement capability
Applications: 

Bulk Microdefects
Additional remarks: 

OPTIONS

  • Wafer handler:
    • single cassette upto 300mm wafer
    • wafer handling with edge gripper
  • Defect position marking
  • CCD camera
  • Dual laser with user defined wavelengths

DIMENSIONS

Complete system incl. main unit, vibration free table electronics, system controller:

1300mm(L)x900mm(W)x1700(H)mm

Technologies: 

Bulk Micro Defects