QC-2500e

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Near surface doping mapper

The QC-2500e uses non-contact ac-Surface Photo Voltage technology to perform non-destructive measurements of near-surface resistivity, doping concentration and recombination lifetime on as-grown epitaxial wafers.

Full hand-off automatization makes the system capable of supporting a high volume wafer manufacturing facility.

Rapidity of even full wafer mapping measurements ensures an impressive throughput and the ability to monitor and control the epitaxial process.

Primary applications:

  • in-line reactor or recipe qulification
  • in-line epi reactor monitoring
  • pre-shipment testing for wafer suppliers
  • incoming inspection for IC manufacturers
  • process development
Equipments: Measurement parameters: Measurable wafer types:
  • blue and UV dual excitation light head
  • UV pre-treatment chamber
  • corona charge
  • single load port, SECS/GEM
  • can be configured FOUP, SMIF or OC
  • doping concentration - NSC
  • resistivity - ρ
  • depletion layer width - Wd
  • surface recombination lifetime - τs
  • conductivity type - p/n
  • conventional CMOS epi
  • thin epi
  • epi over buried layers

 

Applications: 

Epi Layer Monitoring