Literature

Yearsort descending Title Author Published
1989 Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps T. Pavelka and G. Ferenczi

Materials Science Forum Vols.38-41, 803-808

1989 Dispersive Microwave Transient Spectroscopy of Deep Levels in Semiconductors D. Huber, P. Eichinger, G. Ferenczi, T. Pavelka, G. Veszely

Materials Science and Engineering, B 4 (1989) 489

1989 Temperature Dependence of the Capture Cross Section of Seo as Measured by Microwave Absorption Spectroscopy (MAS) T. Pavelka and B. Hemm

Materials Science Forum Vols. 38-41, 469-472

1990 DLTS Investigation of Deep Levels in Bulk GaAs under Uniaxial Stress C.A. Londos, T. Pavelka

Semicond. Sci. Technol., 5, 1100-1104

1991 Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon G. Ferenczi, T. Pavelka, P. Tüttő

Japanese Journ. of Applied Physics, 30, No.12B, 3630-3633

1991 Improved Method for Depth Profiling of Multilayer Structures T.S. Horányi, P. Tüttő, G. Endrédi

Applied Surface Science, 50, 143-148

1991 Electrochemical Method for the Measurement of Doping Profiles in Silicon T.S. Horányi, P. Tüttő, G. Endrédi

Proceedings of the 3rd European Conference on Crystal Growth, May 5-11

1993 A New Method for Simultaneous Characterisation of Process Cleanliness and True Particle Removal Efficiency N.E. Henelius, H. Ronkainen, O.J. Anttila, J.M. Molarius

Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (Oct. 1993), Vol 94-07, pages 434-441

1993 Ballistic Electron Emission Microscopy of Schottky Diodes on RF-Plasma-Treated Silicon L. Quattropani, K. Solt, P. Niedermann, I. Maggio-Aprile, O. Fischer, T. Pavelka

Applied Surface Science,70/71, 391-395

1993 Electrochemical Etching and Profiling of Silicon T.S. Horányi, P. Tüttő

Applied Surface Science, 63, 316-321

1993 In Situ Bulk Lifetime Measurement on Silicon with a Chemically Passivated Surface T.S. Horányi, T. Pavelka, P. Tüttő

Applied Surface Science, 63, 306-311

1993 Investigation of Recombination Properties of Ti Double Donor in Silicon G. Ferenczi, T. Pavelka, P. Tüttő, L. Köster

Solid State Phenomena, 32-33, 609-614

1995 Element Specific Diagnosis Using Microwave Reflection Photoconductive Decay L. Köster, P. Blöchl, L. Fábry

Jpn. J. Appl. Phys., Vol. 34(1995), pp. 932-936

1996 Identification Possibility of Metallic Impurities in p-Type Silicon by Lifetime Measurement T.S. Horányi, P. Tüttő, Cs. Kovacsics

J. Electrochem. Soc., 143, No. 1, 216-220

1996 New Possibilities for the Microwave Photoconductive Decay Technique T. Pavelka

Semiconductor Fabtech, 4th Edition, 247-249

1997 Monitoring of Noble Metals in HF Based Chemistries by u-PCD, SPV, SCI and SCP A. Daniel, U. Straube, G. Kamarinos, E. Kamieniecki, F. Tradif

Cleaning Technology in Semiconductor Device Manufacturing, proceeding of the Fifth International Symposium (Sept. 1997), Vol. 97-35, pages 400-407

1997 Process Monitoring of Ultrathin Oxides using Surface Charge Analysis A.H. Field

In-line characterization techniques for performance and yield enhancement in microelectronic manufacturing, Conference, Austin TX, USA(01/10/1997), vol. 3215, pp. 10-16

1997 Charge Carrier Lifetime Modification in Silicon by High Energy H+, He+ Ion Implantation N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L.P. Bíró, F. Pászti, T. Mohácsy, Cs. Kovacsics, A. Manuaba, J. Gyulai

Materials Science Forum, 248-249, 101-103

1997 Charge Carrier Lifetime Modification in Silicon by High Energy H+or He+ Ion N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L.P. Bíró, A. Manuaba, and J. Gyulai

Nucl. Inst. Meth. B127-128, 388-392.

1998 Problems and Possibilities of Comparing Different Lifetime Measuring Instruments and Techniques T. Pavelka

Recombination Lifetime Measurements in Silicon, ASTM publication # STP 1340, Eds., America Society for Testing and Materials, 206-216

1998 Contamination reduction and control in integrated circiut manufacturing J.E. Steinle

TI Technical Journal, Engineering Quality, April-June, 1998

1999 Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing M. Yli-Koski, J. Mellin, V. Ovchinnikov

Solid-State Phenomena, Vols. 69-70, pp. 291-294.

1999 Evaluation of precipitation and denuded zone depth on different silicon materials J.E. Steinle

TI Technical Journal, Engineering Technology, April-June, 1999

1999 Evaluation of Advanced Pre-Gate Cleanings C. Cowache, P. Boelen, I. Kashkoush, P Besson, F. Tardif

Cleaning Technology in Semiconductor Device Manufacturing, Proceedings of the Sixth International Symposium (Oct.1999), Vol. 99-36, pages 59-68

1999 Lifetime Measurements in SOI and Epi Structures T. Pavelka, Z. Batari

Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes, Proceedings of ALTECH 99, Leuven, Belgium, Electrochemical Society Proceedings Volume 99-16, 48-55.

1999 Determination of Recombination Center Parameters by the Combined Application of µ-PCD and SPV Techniques T. Pavelka, A. Tóth, G. Bayer

Proceedings of the Diagnostic Techniques for Semiconductor Materials and Devices, (1999 Joint Int. Meeting, 196th Meeting of The Electrochemical Society (ECS) and the 1999 Fall Meeting of The Electrochemical Society of Japan (ECSJ), Honolulu, Hawaii, Oct. 17-22, 1999., Abstract No. 1370.

1999 Temperature dependence of carrier recombination lifetimes in n-type silicon A. Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze, P. Tüttő, T. Pavelka, G. Wachutka

Proceedings of the International Semiconductor Device Research Symposium (Charlottesville 1999), pp. 539-542

2000 Investigation of Deep Levels and Precipitates Related to Molybdenum in Silicon by DLTS and Scanning Infrared Microscopy B. Sandhu, T. Ogikubo, H. Goto, V. Csapó, T. Pavelka

Journ. of Crystal Growth, 210, 116-121

2000 Analytical Tools for the Characterization of Power Devices H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, B. Simmnacher, B.O. Kolbesen, P. Tüttő, T. Pavelka, G. Wachutka

J. Electrochem. Soc., 147 (10), pp. 3879-3888

2000 Carrier lifetime control and characterization of high-resistivity silicon used for high-power devices H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka

Proceedings of 198th Meeting of the Electrochemical Society, Phoenix

2000 Lifetime mapping of Si Wafers by an Infrared Camera M. Bail, J. Kentsch, R. Brendel, M. Schulz

Proceeding of the 28th IEEE Photovoltaic Specialists Conference, (IEEE NewYork 2000.) p 99.

2000 Low-Cost High Efficient Milticrystalline Silicon for Photovoltaics M.B.I. Diaz, C. Haessler

Proceedings of the 6th energie "Marie-Curie" Research Training Fellowship Conference, Paris, May, 2000.

2000 Qualification of Epi Layers and Interface Properties by an Improved µ-PCD Technique T. Pavelka, D.C. Gupta and G.A. Brown

Gate Dielectric Integrity: Material, Process and Tool Qualification, ASTM STP 1382, Eds., American Society for Testing and Materials, 145-154

2001 Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment H. Takato, I. Sakata, R. Shimokawa

Jpn. J. Appl. Phys. Vol 40 (2001) pp. L1003-L1004, Part2, No 10A, 1 Oct. 2001

2001 Carrier lifetime analysis by photoconductive decay and free carrier absorption measurements H-J. Schulze, A. Frohnmeyer, F.-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka

J. Electrochem. Soc.148 (2001) 11, p. G655.-G661.

2001 Process induced oxide and interface charges and their reactivity with carriers in bulk silicon J.E. Steinle

TI Technical Journal, Engineering Technology, 2001

2001 Reflection mode scanning infrared microscope (SIRM) and its applications to defect detection in silicon (Scanning Infrared Microscope and Its Application in Silicon) Cs. Kovacsics

DRIP IX Conference (Sept. 2001), Poster Sessions, P1-B: Defects in Silicon, P1-14

2002 Contactless surface charge semiconductor characterization D.K. Schröder

Materials Science & Engineering B91-92 (2002), 196-210

2002 Detection of low-level copper contamination in p-type silicon by means of microwave photoconductive decay measurements M. Yil-Koski, M. Palokangas, A. Haarahiltunen, H. Vainöla, J. Storgards, H. Holmberg, J. Sinkkonen

J. Phys.: Condensed Matter, 14 (2002), 13119-13125

2002 Product wafer monitoring of ultra-shallow channel implants with an elastic metal gate (EM-gate) R.J. Hillard, W.H. Howland, R.G. Mazur, W. Ye, N.K. Variam

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20 (2002) 488

2003 Silicon Epitaxial Layer Recombination and Generation Lifetime Characterization D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, J. Benton

IEEE Transactions on Electron Devices, Vol. 50, No.4, pp 906.

2003 Determination of Metallic Impurities in a Silicon Wafer by Local Etching and Electrothermal Atomic Absorption Spectrometry H-Y. Chung, S-H Lee, Y-H. Kim, K-S. Lee, D-H. Kim

Analytical Sciences, The Japan Society for Analytical Chemistry, Vol. 19, July 2003, pp. 1051-1054

2003 Improvements in PV performance and Yield (INSPIRE) Report of a project carried out under the DTI's New and Renewable Energy Programme B.J. Garrad

... Crown, 14/01/2003

2003 Comparative Study on Emitter Sheet Resitivity Measurements for Inline Quality Control E. Rüland, P. Fath, T. Pavelka, A. Pap, K. Peter, J. Mizsei

Proceedings of the 3rdWorld Conference on Photovoltaic Solar Energy Conversion, Osaka

2004 First Results of the Solarcentre Erfurt - a New Pertner in Photovoltaic Research S. Dauwe, L. Mittelstadt, A. Lawerenz, H.J.Freitag, C. Beneking, H. Aulich

Poster of 19th European Photovoltaic Solar Energy Conference and Exhibition (7-11 June 2004, Paris, France)

2004 Measurements of Ultra-Shallow Junction (USJ) Sheet Resistance with a Non-Penetrating Four Point Probe R.J. Hillard, R.G. Mazur, W.J. Alexander, C. Win Ye, M.C. Benjamin, J.O. Borland

Materials Research Society MRS Symposium Proceedings vol. 810

2004 Accurate Determination of Ultra-Shallow Junction Sheet Resistance with a Non-Penetrating Four Point Probe R.J. Hillard, J. Borland, C. Win Ye

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on, pp. 98-101

2004 Accurate Determination of Ultra-Shallow Junction Sheet Resistance with a Non-Penetrating Four Point Probe R.J. Hillard, C. Win Ye, L. Tan, M.C. Benjamin, R.G. Mazur

SEMICON® West, SEMI®Technical Symposium: Innovations in Semiconductor Manufacturing, Semiconductor Equipment and Materials International, ISBN # 1-892568-79-9

2005 Quantitative copper measurement in oxidized p-type silicon wafers using microwave photoconductivity decay H. Vainola, E. Saarnilehto, M. Yli-Koski, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka

Appl. Phys. Letters 87, 032109

2005 Measurement of copper in p-type silicon using charge-carrier lifetime methods M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berényi, T. Pavelka

Solid State Phenomena Vols. 108-109 pp. 643-648

2005 Making Use of Silicon Wafers with Low Lifetimes by Adequate POCl3 Diffusion J. Lossen, L. Mittelstädt, S. Dauwe, K. Lauer, C. Beneking

20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6.-10. June 2005

2005 Determination of electrically Active Surface Dopant Density in Ultra-Shallow Junction (USJ) Structures with a Non-Destructive Elastic Material Probe (EM-Probe) R.J. Hillard, M.V. Benjamin, W.C. Ye, J.O. Borland

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2005 Recent Developments in Electrical Metrology for MOS Fabrication R.J. Hillard, M.C. Benjamin, G.A. Brown

http://www.nist.gov/pml/div683/conference/

2005 Microwave photoconductive decay mapping and investigation of lifetimes in 4H-SiC epitaxial layers J.D. Cadwell, A. Pap, A. Shrivastava, Z. Zhang, P.B. Klein, T. Pavelka, T. Sudarshan, O.J. Glembocki, K. Hobart, F. Kub

Presented at Int. Conf. on Silicon Carbide and Related Materials (ICSCRM 2005), Pittsburgh, USA

2005 Ultra Low Energy (ULE) Implant Dose & Activation Monitoring J. Borland, R. Hillard, M. Benjamin

Junction Technology, 2005. Extended Abstracts if the Fifth International Workshop on, pp 49-52

2006 Carrier Lifetime Mapping and Lifetime studies of 4H-SiC Epilayers J.D. Caldwell, P.B. Klein, O. Glembocki, K. Hobart, F. Kub, A. Pap, T. Pavelka, A. Shrivastava, Z. Zhang, T. Sudarshan, G. Webster

Materials Research Society MRS, Spring Meeting

2006 45 nm Node p+ USJ Formation With High Dopant Activation And Low Damage J. Borland, S. Shishiguchi, A. Mineji, W. Krull, D. Jacobson, M. Tanjyo, W. Lerch, S. Paul, J. Gelpey, S. McCoy, J. Venturini, M. Current, V. Faifer, R. Hillard, M. Benjamin, T. Walker, A. Buczkowski, Z. Li, J. Chen

Junction Technology, 2006. IWJT '06. International Workshop on pp. 4 - 9

2006 Metrology and high resolution mapping of shallow junctions formed by low energy implant processes E. Don, A. Pap, T. Pavelka, P. Tüttő, C. Wyon, C. Laviron, R. Oechsner, M. Pfeffer

Proceedings of Conf. on Ion Implant Technology (IIT 2006), Marseille, France, CP866, Ion Implantation technology, American Inst. Of Physics, 534-537.

2007 Determination of implant activation and junction leakage with a non-penetrating and non-damaging elastic material probe (EM-Probe) R.J. Hillard, M. Benjamin, J.O. Borland

International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT-2007), May 6 - 9, 2007, Napa, California

2007 Carrier Lifetime Measurements in Silicon for Photovoltaic Applications T. Pavelka, A. Pap, Gy. Szilágyi

212th ECS Meeting, October 7-12, Washington, DC

2007 Determination of Activated Dopant Profiles with a Novel FastGate® Probe R.J. Hillard, C. Win Ye, M.C. Benjamin, K. Suguro

Junction Technology, 2007 International Workshop on, pp 47-48

2007 Improvements to High Resolution Mapping of Junction Photovoltage Measured Sheet resistance by Correcting for wafer edge and compensating for junction leakage E. Don, C. Kohn, A. Pap, P. Tüttő, T. Pavelka, C. Laviron, C. Wyon, R. Oechsner, M. Pfeffer

6-9 May 2007 at INSIGHT 2007 Conference, Napa Valley, USA

2007 High Resolution Mapping of Sheet Resistance reveal implanter or anneal non-uniformities -

SEMI Seminars, 19th July 2007, San Francisco, USA, West Coast Junction Technology Group, USJ metrology seminar

2007 Metrology, Analysis and Charaterization in Micro- and Nanotechnologies - A European Challenge L. Pfitzner, A. Nutsch, R. Oechsner, M. Pfeffer, E. Don, C. Wylon, M. Hurlebaus

Proceedings of Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007), pages 35-49

2007 Monitoring plasma nitridation of HfSiOx by corona charge measurements J-L. Everaert, X. Shi, A. Rothschild, M. Schaekers, E. Rosseel, T. Pavelka, E. Don, S. Vanhaelemeersch

Microelectronic Engeneering, 84, 2251-2254

2007 Three dimensional mapping of thermal and tunneling electron emission from InAs/GaAs quantum dots O. Engström, M. Kaniewska, W. Jung, M. Kaczmarczyk

Appl.Phys.Letters 91, 033110 (published online 19 July 2007)

2008 Junction Photovoltage Metrology and high resolution mapping of ion implants electrically isolated from wafer surface F. Korsós, K. Kis-Szabó, E. Don, A. Pap, T. Pavelka, C. Laviron, M. Pfeffer

Ion Implantation Technology Conference, Monterey, California, 8th – 13th June

2008 Ultra Shallow Junctions fabrication by Plasma Immersion Implantation on PULSION® followed by Spike and/or Flash Annealing. Effect of pre-amorphization and co-implantation on Boron diffusion in Silicon H. Etienne, F. Torregrosa, G. Semoere, G. Mathieu, L. Roux, F. Cristiano, P. Fazzini, W. Lerch, S. Paul, J. Gelpey, F. Milesi, F. Gonzatti, A. Pap, K. Kis-Szabo, T. Pavelka

E-MRS Spring Meeting, Strasbourg, France, May 26 - May 30

2008 Ultra Shallow Junctions fabrication by Plasma Immersion Implantation on PULSION® followed by Spike and/or Flash Annealing. Effect of pre-amorphization and co-implantation on Boron diffusion in Silicon H. Etienne, F. Torregrosa, G. Semoere, G. Mathieu, L. Roux, F. Cristiano, P. Fazzini, W. Lerch, S. Paul, J. Gelpey, F. Milesi, F. Gonzatti, A. Pap, K. Kis-Szabo, T. Pavelka

E-MRS Spring Meeting, Strasbourg, France, May 26 - May 30

2008 Nanomechanical properties of ion-implanted Si P.M. Nagy, D. Aranyi, P. Horváth, G. Pető, E. Kálmán

Surface and Interface Analysis, Vol. 40, Issue 3-4, p 875-880, 10 March, 2008

2008 Fabrication and characterisation challenges on Ultra Shallow Junctions for sub 45 nm CMOS devices F. Torregrosa, H. Etienne, G. Sempere, G. Mathieu, L. Roux, C. Grosjean, R. Daineche, Y. De Puydt, L. Dupuy, P. Galand, A. Pap, K. Kis-Szabo, T. Pavelka

11th Technical & Scientific Meeting of ARCSIS, 20-21 Nov., STUniversity in Fuveau, France (2008)

2008 Determining of sheet resistance of implanted wafers with technique of non-contact junction photovoltage measurement -

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2008 Control of Laser Induced Interface Traps with In-line Corona Charge Metrology J-L. Everaert, E. Rosseel, C. Ortolland, M. Aoulaiche, T. Hoffmann, T. Pavelka, E. Don

Advanced Thermal Processing of Semiconductors, 2008. RTP 2008. 16th IEEE International Conference on

2009 Comparison of Silicon Surface Preparation Methods for Measurement of Minority Carrier Lifetime Using the Microwave Photoconductive Decay (µ-PCD) Coupled with Continuous Corona Charge (Charge-PCD) T. Pavelka, Á. Pap, P. Kenesei, M. Varga, F. Novinics, M. Tallián, G. Borionetti, G. Guaglio, M. Pfeffer, and E. Don

ECS Transactions Volume 25, Issue No. 3, Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009)

2010 Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance J.L. Everaert, E. Rosseel, A. Mészáros, K. Kis-Szabó, P. Tüttő, A. Pap, T. Pavelka, M. Wilson, A. Findlay, P. Edelman and J. Lagowski

217th ECS Meeting Vacouver, Canada, April 25-30, 2010

2010 Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics J.L. Everaert, E. Rosseel, J. Dekoster, A. Pap, A. Mészáros, K. Kis-Szabó and T. Pavelka

Appl. Phys. Lett. 96 (2010) 122906

2010 Implant Monitoring Measurements On Ultra Shallow Implants Before And After Anneal Using Photomodulated Reflection And Junction Photovoltage Measurement Techniques M. Tallián, A. Pap, K. Mocsár, A. Somogyi, Gy. Nádudvari, D. Kosztka and T. Pavelka

ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010

2010 Monitoring Ion Implantation Energy Using Non‐contact Characterization Methods M. Tallián, A. Pap, K. Mocsár, A. Somogyi, Gy. Nádudvari, D. Kosztka and T. Pavelka

ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010

2011 Multifunction metrology platform for photovoltaics M. Wilson, J. D'Amico, A. Savtchouk, P. Edelman, A. Findlay, L. Jastrzebski, J. Lagowski, K. Kis-Szabó, F. Korsós, A. Tóth, A. Pap, R. Kopecek, K. Peter

IEEE 37th Photovoltaic Specialists Conference (PVSC), 2011

2012 Recombination via point defects and their complexes in solar silicon A.R. Peaker, V. P. Markevich, B. Hamilton, G. Parada, A. Dudás, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon and G. Rozgonyi

Physica Status Solidi (a) Volume 209, Issue 10, pages 1884–1893

2012 Integrated electrical and optical characterization of large area thin film photovoltaic materials G. Szitasi, F. Korsós, D. Selmeczi, O. Takács, F. Novinics, P. Tüttő, A. Findlay, M. Wilson

IEEE 38th Photovoltaic Specialists Conference (PVSC), 2012

2013 Spectroscopic ellipsometry on metal and metal-oxide multilayer hybrid plasmonic nanostructures A.A. Khosroabadi, P. Gangopadhyay, B. Cocilovo, L. Makai, P. Basa, B. Duong, J. Thomas, and R.A. Norwood

Optics Letters, Vol. 38, Issue 19, pp. 3969-3972

2014 Detection and characterization of three-dimensional interconnect bonding voids by infrared microscopy J. Höglund, Z. Kiss, Gy. Nádudvari, Zs. Kovács, Sz. Velkei, C. Moore, V. Vartanian, R.A. Allen

Journal of Micro/Nanolithography, MEMS, and MOEMS 13(1) (2014) 011208