Literature

Yearsort descending Title Author Published
1989 Temperature Dependence of the Capture Cross Section of Seo as Measured by Microwave Absorption Spectroscopy (MAS) T. Pavelka and B. Hemm

Materials Science Forum Vols. 38-41, 469-472

1989 Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps T. Pavelka and G. Ferenczi

Materials Science Forum Vols.38-41, 803-808

1989 Dispersive Microwave Transient Spectroscopy of Deep Levels in Semiconductors D. Huber, P. Eichinger, G. Ferenczi, T. Pavelka, G. Veszely

Materials Science and Engineering, B4

1990 DLTS Investigation of Deep Levels in Bulk GaAs under Uniaxial Stress C.A. Londos, T. Pavelka

Semicond. Sci. Technol., 5, 1100-1104

1991 Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon G. Ferenczi, T. Pavelka, P. Tüttő

Japanese Journ. of Applied Physics, 30, No.12B, 3630-3633

1991 Improved Method for Depth Profiling of Multilayer Structures T.S. Horányi, P. Tüttő, G. Endrédi

Applied Surface Science, 50, 143-148

1991 Electrochemical Method for the Measurement of Doping Profiles in Silicon T.S. Horányi, P. Tüttő, G. Endrédi

Proceedings of the 3rd European Conference on Crystal Growth, May 5-11

1993 Ballistic Electron Emission Microscopy of Schottky Diodes on RF-Plasma-Treated Silicon L. Quattropani, K. Solt, P. Niedermann, I. Maggio-Aprile, O. Fischer, T. Pavelka

Applied Surface Science,70/71, 391-395

1993 Electrochemical Etching and Profiling of Silicon T.S. Horányi, P. Tüttő

Applied Surface Science, 63, 316-321

1993 In Situ Bulk Lifetime Measurement on Silicon with a Chemically Passivated Surface T.S. Horányi, T. Pavelka, P. Tüttő

Applied Surface Science, 63, 306-311

1993 Investigation of Recombination Properties of Ti Double Donor in Silicon G. Ferenczi, T. Pavelka, P. Tüttő, L. Köster

Solid State Phenomena, 32-33, 609-614

1993 Method for the measurement of long minority carrier diffusion lengths exceeding wafer thickness J. Lagowski, A.M. Kontkiewicz, L. Jastrzebski, P. Edelman

Applied Physics Letters 63 (1993) 2902

1993 Iron detection in the part per quadrillion range in silicon using surface photovoltage and photodissociation of iron‐boron pairs J. Lagowski, P. Edelman, A.M. Kontkiewicz, O. Milic, W. Henley, M. Dexter, L. Jastrzebski, A.M. Hoff

Applied Physics Letters 63 (1993) 3043

1993 Monitoring of Heavy Metal Contamination during Chemical Cleaning with Surface Photovoltage L. Jastrzebski, O. Milic, M. Dexter, J. Lagowski, D. DeBusk, K. Nauka, R. Witowski, M. Gordon, E. Persson

Journal of the Electrochemical Society 140 (1993) 1152

1993 A New Method for Simultaneous Characterisation of Process Cleanliness and True Particle Removal Efficiency N.E. Henelius, H. Ronkainen, O.J. Anttila, J.M. Molarius

Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (Oct. 1993), Vol 94-07, pages 434-441

1995 New Surface Photovoltage (SPV) Method for High Precision Measurement of the Minority Carrier Diffusion Length and Surface Recombination Velocity in Silicon Wafers V. Faifer, P. Edelman, A. Kontkiewicz, J. Lagowski, A. Hoff, V. Dyukov, A. Pravdivtsev, I. Kornienko

Proceedings of ALTECH 95, vol. 95-30, pp. 73-82

1995 Element Specific Diagnosis Using Microwave Reflection Photoconductive Decay L. Köster, P. Blöchl, L. Fábry

Jpn. J. Appl. Phys., Vol. 34(1995), pp. 932-936

1996 Identification Possibility of Metallic Impurities in p-Type Silicon by Lifetime Measurement T.S. Horányi, P. Tüttő, Cs. Kovacsics

J. Electrochem. Soc., 143, No. 1, 216-220

1996 New Possibilities for the Microwave Photoconductive Decay Technique T. Pavelka

Semiconductor Fabtech, 4th Edition, 247-249

1996 A Novel Method For Studying Degradation Related To Plasma Processing Of Silicon Wafers J. Lagowski, A. Hofl, L. Jastrzebski, P. Edelman, T. Esry

1996 MRS Spring Meeting

1997 Process Monitoring of Ultrathin Oxides using Surface Charge Analysis A.H. Field

In-line characterization techniques for performance and yield enhancement in microelectronic manufacturing, Conference, Austin TX, USA(01/10/1997), vol. 3215, pp. 10-16

1997 Charge Carrier Lifetime Modification in Silicon by High Energy H+, He+ Ion Implantation N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L.P. Bíró, F. Pászti, T. Mohácsy, Cs. Kovacsics, A. Manuaba, J. Gyulai

Materials Science Forum, 248-249, 101-103

1997 Charge Carrier Lifetime Modification in Silicon by High Energy H+or He+ Ion N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L. P.Bíró, A. Manuaba, and J. Gyulai

Nucl. Inst. Meth. B127-128, 388-392.

1997 Correlation Of Nitride Spacer Plasma Damage Results From Conventional Gate Capacitor Electrical Tests And A New, Non-contact Approach M.W. Goss, A. Findlay

2nd International Symposium on Plasma Process-Induced Damage, 1997.

1997 Monitoring of Mobile Sodium Ions in SiO2 Using Corona Charging F.A. Stevie, E. Persson, D.K. DeBusk, A. Savchuk, A.M. Hoff, P. Edelman, J. Lagowski

Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices

1997 Monitoring of Noble Metals in HF Based Chemistries by u-PCD, SPV, SCI and SCP A. Daniel, U. Straube, G. Kamarinos, E. Kamieniecki, F. Tradif

Cleaning Technology in Semiconductor Device Manufacturing, proceeding of the Fifth International Symposium (Sept. 1997), Vol. 97-35, pages 400-4007

1998 Problems and Possibilities of Comparing Different Lifetime Measuring Instruments and Techniques T. Pavelka, D.C. Gupta, F.R. Bacher, W.M. Hughes

Recombination Lifetime Measurements in Silicon, ASTM publication # STP 1340, Eds., America Society for Testing and Materials, 206-216

1998 Contamination reduction and control in integrated circiut manufacturing J.E. Steinle

TI Technical Journal, Engineering Quality, April-June, 1998

1999 COCOS (corona oxide characterization of semiconductor) metrology: Physical principles and applications M. Wilson, J. Lagowski, A. Savtchouk, L. Jastrzebski, J. D'Amico

 

1999 New COCOS (Corona oxide characterization of semiconductor) method for monitoring the reliability of thin gate oxides M. Wilson, J. Lagowski, A. Savtchouk, L. Jastrebski, J. D'Amico, D.K. DeBusk, A. Buczkowski

ALTECH 99: analytical techniques for semiconductor materials and process characterization

1999 Lifetime Measurements in SOI and Epi Structures T. Pavelka, Z. Batari

Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes, Proceedings of ALTECH 99, Leuven, Belgium, Electrochemical Society Proceedings Volume 99-16, 48-55.

1999 Determination of Recombination Center Parameters by the Combined Application of µ-PCD and SPV Techniques T. Pavelka, A. Tóth, G. Bayer

Proceedings of the Diagnostic Techniques for Semiconductor Materials and Devices, (1999 Joint Int. Meeting, 196th Meeting of The Electrochemical Society (ECS) and the 1999 Fall Meeting of The Electrochemical Society of Japan (ECSJ), Honolulu, Hawaii, Oct. 17-22, 1999., Abstract No. 1370.

1999 Temperature dependence of carrier recombination lifetimes in n-type silicon A. Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze, P. Tüttő, T. Pavelka, G. Wachutka

Proceedings of the International Semiconductor Device Research Symposium (Charlottesville 1999), pp. 539-542

1999 Detection of copper contamination in silicon by surface photovoltage diffusion length measurements W.B. Henley, D.A. Ramappa, L. Jastrezbski

Applied Physics Letters 74 (1999) 278

1999 Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing M. Yli-Koski, J. Mellin, V. Ovchinnikov

Solid-State Phenomena, Vols. 69-70, pp. 291-294.

1999 Evaluation of precipitation and denuded zone depth on different silicon materials J.E. Steinle

TI Technical Journal, Engineering Technology, April-June, 1999

1999 Effects of Copper Contamination in Silicon on Thin Oxide Breakdown D.A. Ramappa, W.B. Henley

Journal of the Electrochemical Society 146 (1999) 2258

1999 Diffusion of Iron in Silicon Dioxide D.A. Ramappa, W.B. Henley

Journal of the Electrochemical Society 146 (1999) 3773

1999 Evaluation of Advanced Pre-Gate Cleanings C. Cowache, P. Boelen, I. Kashkoush, P Besson, F. Tardif

Cleaning Technology in Semiconductor Device Manufacturing, Proceedings of the Sixth International Symposium (Oct.1999), Vol. 99-36, pages 59-68

1999 Small Signal AC-Surface Photovoltage Technique for Non-Contact Monitoring of Near Surface Doping and Recombination-Generation in the Depletion Layer D. Marinskiy, J. Lagowski, M. Wilson, A. Savtchouk, L. Jastrzebski, D. DeBusk

1999 MRS Fall Meeting

2000 Lifetime mapping of Si Wafers by an Infrared Camera M. Bail, J. Kentsch, R. Brendel, M. Schulz

Proceeding of the 28th IEEE Photovoltaic Specialists Conference, (IEEE NewYork 2000.) p 99.

2000 Relationship between yield and reliability impact of plasma damage to gate oxide P.W. Mason, D.K. DeBusk, J.K. McDaniel, A.S. Oates, K.P. Cheung

5th International Symposium on Plasma Process-Induced Damage, 2000

2000 Low-Cost High Efficient Milticrystalline Silicon for Photovoltaics M.B.I. Diaz, C. Haessler

Proceedings of the 6th energie "Marie-Curie" Research Training Fellowship Conference, Paris, May, 2000.

2000 COCOS (Corona Oxide Characterization of Semiconductor) Non-Contact Metrology for Gate Dielectrics M. Wilson, J. Lagowski, L. Jastrzebski, A. Savtchouk, V. Faifer

Characterization and Metrology for ULSI Technology, 2000

2000 Non-contact Thickness and Electrical Characterization of High-k Dielectrics A.F. Bello, S. Kher, D. Marinskiy

Characterization and Metrology for ULSI Technology, 2000

2000 Small Signal ac-Surface Photovoltage Technique for Non-Contact Monitoring of Near Surface Doping for IC-processing D. Marinskiy, J. Lagowski, M. Wilson, L. Jastrzebski, R. Santiesteban, K. Elshot

Proceedings of the SPIE, Volume 4182, p. 72-77 (2000)

2000 Non-contact, In-line Monitoring of Low Dose and Low Energy Ion Implantation R.S. Santiesteban, D.K. DeBusk, D.A. Ramappa, W.M. Moller

Conference on Ion Implantation Technology, 2000

2000 Qualification of Epi Layers and Interface Properties by an Improved µ-PCD Technique T. Pavelka, D.C. Gupta and G.A. Brown

Gate Dielectric Integrity: Material, Process and Tool Qualification, ASTM STP 1382, Eds., American Society for Testing and Materials, 145-154

2000 Investigation of Deep Levels and Precipitates Related to Molybdenum in Silicon by DLTS and Scanning Infrared Microscopy B. Sandhu, T. Ogikubo, H. Goto, V. Csapó, T. Pavelka

Journ. of Crystal Growth, 210, 116-121

2000 Analytical Tools for the Characterization of Power Devices H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, B. Simmnacher, B.O. Kolbesen, P. Tüttő, T. Pavelka, G. Wachutka

J. Electrochem. Soc., 147 (10), pp. 3879-3888

2000 Carrier lifetime control and characterization of high-resistivity silicon used for high-power devices H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka

Proceedings of 198th Meeting of the Electrochemical Society, Phoenix

2001 Reflection mode scanning infrared microscope (SIRM) and its applications to defect detection in silicon (Scanning Infrared Microscope and Its Application in Silicon) Cs. Kovacsics

DRIP IX Conference (Sept. 2001), Poster Sessions, P1-B: Defects in Silicon, P1-14

2001 SPV Monitoring of Near Surface Doping – Role of Boron-Hydrogen Interaction; Boron Passivation and Reactivation D. Marinskiy, J. Lagowski

2001 MRS Spring Meeting

2001 Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment H. Takato, I. Sakata, R. Shimokawa

Jpn. J. Appl. Phys. Vol 40 (2001) pp. L1003-L1004, Part2, No 10A, 1 Oct. 2001

2001 Non Contact Surface Potential Measurements for Charging Reduction During Manufacturing of Metal-Insulator-Metal Capacitors J. Ackaert, Z. Wang, E. De Backer, P. Colson, P. Coppens

Microelectronics Reliability 41 (2001) 1403

2001 Carrier lifetime analysis by photoconductive decay and free carrier absorption measurements H-J. Schulze, A. Frohnmeyer, F.-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka

J. Electrochem. Soc.148 (2001) 11, p. G655.-G661.

2001 Process induced oxide and interface charges and their reactivity with carriers in bulk silicon J.E. Steinle

TI Technical Journal, Engineering Technology, 2001

2002 Full wafer non-contact mapping of electrical properties of ultra-thin advanced dielectrics on Si P. Edelman, J. Lagowski, A. Savtchouk, M. Wilson, A. Aleynikov, D. Marinskiy, J. Navarro

Materials Science and Engineering: B 91-92 (2002) 211

2002 Product wafer monitoring of ultra-shallow channel implants with an elastic metal gate (EM-gate) R. J. Hillard, W. H. Howland, R. G. Mazur, W. Ye, N. K. Variam

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 20 (2002) 488

2002 Contactless surface charge semiconductor characterization D.K. Schröder

Materials Science & Engineering B91-92 (2002), 192-210

2002 Detection of low-level copper contamination in p-type silicon by means of microwave photoconductive decay measurements M. Yil-Koski, M. Palokangas, A. Haarahiltunen, H. Vainöla, J. Storgards, H. Holmberg, J. Sinkkonen

J. Phys.: Condensed Matter, 14 (2002), 13119-13125

2003 Determination of Metallic Impurities in a Silicon Wafer by Local Etching and Electrothermal Atomic Absorption Spectrometry H-Y. Chung, S-H Lee, Y-H. Kim, K-S. Lee, D-H. Kim

Analytical Sciences, The Japan Society for Analytical Chemistry, Vol. 19, July 2003, pp. 1051-1054

2003 Improvements in PV performance and Yield (INSPIRE) Report of a project carried out under the DTI's New and Renewable Energy Programme B.J. Garrard

DTI New and Renewable Energy Programme

2003 Comparative Study on Emitter Sheet Resitivity Measurements for Inline Quality Control E. Rüland, P. Fath, T. Pavelka, A. Pap, K. Peter, J. Mizsei

Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion, Osaka

2003 Non-contact Doping Profiling in Epitaxial SiC A. Savtchouk, E. Oborina, A.M. Hoff, J. Lagowski

International Conference on SiC and Related Materials, 2003

2003 Non-Contact Electrical Doping Profiling D. Marinskiy, J. Lagowski, J. D’Amico, A. Findlay, L. Jastrzebski

International Conference on Characterization and Metrology for ULSI Technology, 2003

2003 Non‐Contact C‐V Technique for high‐k Applications P. Edelman, A. Savtchouk, M. Wilson, J. D’Amico, J.N. Kochey, D. Marinskiy, J. Lagowski

International Conference on Characterization and Metrology for ULSI Technology, 2003

2003 Silicon Epitaxial Layer Recombination and Generation Lifetime Characterization D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, J. Benton

IEEE Transactions on Electron Devices, Vol. 50, No.4, pp 906.

2004 First Results of the Solarcentre Erfurt - a New Pertner in Photovoltaic Research S. Dauwe, L. Mittelstadt, A. Lawerenz, H.J. Freitag,C. Beneking, H. Aulich

Poster of 19th European Photovoltaic Solar Energy Conference and Exhibition (7-11 June 2004, Paris, France)

2004 Measurements of Ultra-Shallow Junction (USJ) Sheet Resistance with a Non-Penetrating Four Point Probe R.J. Hillard, R.G. Mazur, W.J. Alexander, C. Win Ye, M.C. Benjamin, J.O. Borland

Materials Research Society MRS Symposium Proceedings vol. 810

2004 Accurate Determination of Ultra-Shallow Junction Sheet Resistance with a Non-Penetrating Four Point Probe R.J. Hillard, J. Borland, C. Win Ye

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on, pp. 98-101

2004 Accurate Determination of Ultra-Shallow Junction Sheet Resistance with a Non-Penetrating Four Point Probe R.J. Hillard, C. Win Ye, L. Tan, M.C. Benjamin, R.G. Mazur

SEMICON® West, SEMI®Technical Symposium: Innovations in Semiconductor Manufacturing, Semiconductor Equipment and Materials International, ISBN # 1-892568-79-9

2004 Mapping of minority carrier diffusion length and heavy metal contamination with ultimate surface photovoltage method J. Lagowski, A. Aleynikov, A. Savtchouk, P. Edelman

Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)

2004 Non-Contact C-V measurements of ultra thin dielectrics P. Edelman, A. Savtchouk, M. Wilson, J. D'Amico, J.N. Kochey, D. Marinskiy, J. Lagowski

Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)

2005 Measurement of copper in p-type silicon using charge-carrier lifetime methods M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka

Solid State Phenomena Vols. 108-109 pp. 643-648

2005 Making Use of Silicon Wafers with Low Lifetimes by Adequate POCl3 Diffusion J. Lossen, L. Mittelstadt, S. Dauwe, K. Lauer, C. Beneking

20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6.-10. June 2005

2005 Determination of electrically Active Surface Dopant Density in Ultra-Shallow Junction (USJ) Structures with a Non-Destructive Elastic Material Probe (EM-Probe) R.J. Hillard, M.V. Benjamin, W.C. Ye, J.O. Borland

Ultra Shallow Junctions 2005, Daytona Beach, Florida

2005 Recent Developments in Electrical Metrology for MOS Fabrication R. J. Hillard, M. C. Benjamin, G. A. Brown

http://www.nist.gov/pml/div683/conference/

2005 Microwave photoconductive decay mapping and investigation of lifetimes in 4H-SiC epitaxial layers J.D. Cadwell, A. Pap, A. Shrivastava, Z. Zhang, P.B. Klein, T. Pavelka, T. Sudarshan, O.J. Glembocki, K. Hobart, F. Kub

Presented at Int. Conf. on Silicon Carbide and Related Materials (ICSCRM 2005), Pittsburgh, USA

2005 Ultra Low Energy (ULE) Implant Dose & Activation Monitoring J. Borland, R. Hillard, M. Benjamin, E. Gurer

Junction Technology, 2005. Extended Abstracts if the Fifth International Workshop on, pp 49-52

2005 Non-contact charge-voltage method for dielectric characterization on small test areas of IC product wafers P. Edelman, D. Marinskiy, C. Almeida, J.N. Kochey, A. Byelyayev, M. Wilson, A. Savtchouk, J. D’Amico, A. Findlay, L. Jastrzebski, J. Lagowski

11th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors

2005 Quantitative copper measurement in oxidized p-type silicon wafers using microwave photoconductivity decay H. Vainola, E. Saarnilehto, M. Yli-Koski, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka

Appl. Phys. Letters 87, 032109

2006 45 nm Node p+ USJ Formation With High Dopant Activation And Low Damage J. Borland, S. Shishiguchi, A. Mineji, W. Krull, D. Jacobson, M. Tanjyo, W. Lerch, S. Paul, J. Gelpey, S. McCoy, J. Venturini, M. Current, V. Faifer, R. Hillard, M. Benjamin, T. Walker, A. Buczkowski, Z. Li, J. Chen

Junction Technology, 2006. IWJT '06. International Workshop on pp. 4 - 9

2006 Metrology and high resolution mapping of shallow junctions formed by low energy implant processes E. Don, A. Pap, T. Pavelka, P. Tüttő, C. Wyon, C. Laviron, R. Oechsner, M. Pfeffer

Proceedings of Conf. on Ion Implant Technology (IIT 2006), Marseille, France, CP866, Ion Implantation technology, American Inst. Of Physics, 534-537.

2006 Carrier Lifetime Mapping and Lifetime studies of 4H-SiC Epilayers J.D. Caldwell, P. B. Klein, O. Glembocki, K. Hobart, F. Kub, A. Pap, T. Pavelka, A. Shrivastava, Z. Zhang, T. Sudarshan, G. Webster

Materials Research Society MRS, Spring Meeting

2007 In-Line Non-Contact Micro-Kelvin Measurements Applied to ZrO2/Al2O3/ZrO2 Dielectric Stacks in the Active Capacitor Cell Areas of Advanced DRAM J.H. Kim, C.H. Kim, H.W. Yoo, H.L. Kim, S.H. Son, C.H. Lee, T.K. Kim, J. D’Amico, M. Wilson, M. Wilson, S.H. Kim, S.H. Park

ECS Transactions 11 (2007) 377

2007 Application of Non-contact Corona-Kelvin metrology for Characterization of Plasma Nitrided SiO2 A. Belyaev, D. Marinskiy, M. Wilson, J. D’Amico, L. Jastrzebski and J. Lagowski

International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, 2007

2007 Monitoring plasma nitridation of HfSiOx by corona charge measurements J-L. Everaert, X. Shi, A. Rothschild, M. Schaekers, E. Rosseel, T. Pavelka, E. Don, S. Vanhaelemeersch

Microelectronic Engeneering, 84, 2251-2254

2007 Manifestation of Cu Impurities on Silicon Surfaces, Implication for Monitoring Cu Contamination M. Wilson, A. Savtchouk, J. D’Amico, I. Tarasov, L. Jastrzebski and J. Lagowski

ECS Fall conference, 2007

2007 Three dimensional mapping of thermal and tunneling electron emission from InAs/GaAs quantum dots O. Engström, M.Kaniewska, W.Jung, M.Kaczmarczyk

Appl.Phys.Letters 91, 033110 (published online 19 July 2007)

2007 NIST Traceable Small Signal Surface Photo Voltage Reference Wafer A. Bertuch, K. Steeples

International Conference on Frontiers of Characterization and Metrology, 2007

2007 Real‐Time, High Resolution, Dynamic Surface Charge Wafer Mapping for Advanced Ion Implant Process Control K. Gurcan, A. Bertuch, K. Steeples

International Conference on Frontiers of Characterization and Metrology, 2007

2007 Non-Contact Photoelectric Method For Thin SOI Characterization E. Tsidilkovski, K. Steeples

211th ECS Meeting, Chicago, May 2007

2007 Implant Metrology for Bonded SOI Wafers using a Surface Photo-Voltage Technique A. Bertuch, W. Smith, K. Steeples, R. Standley, A. Stefanescu, R. Johnson

211th ECS Meeting, Chicago, May 2007

2007 Determination of implant activation and junction leakage with a non-penetrating and non-damaging elastic material probe (EM-Probe) R.J. Hillard, M. Benjamin, J.O. Borland

International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT-2007), May 6 - 9, 2007, Napa, California

2007 Carrier Lifetime Measurements in Silicon for Photovoltaic Applications T. Pavelka, A. Pap, Gy. Szilágyi

212th ECS Meeting, October 7-12, Washington, DC

2007 Determination of Activated Dopant Profiles with a Novel FastGate® Probe R.J. Hillard, C. Win Ye, M.C. Benjamin, K. Suguro

Junction Technology, 2007 International Workshop on, pp 47-48

2007 Improvements to High Resolution Mapping of Junction Photovoltage Measured Sheet resistance by Correcting for wafer edge and compensating for junction leakage E. Don, C. Kohn, A. Pap, P. Tüttő, T. Pavelka, C. Laviron, C. Wyon, R. Oechsner, M. Pfeffer

6-9 May 2007 at INSIGHT 2007 Conference, Napa Valley, USA

2007 High Resolution Mapping of Sheet Resistance reveal implanter or anneal non-uniformities C. Kohn, E. Don, P. Tüttő, A. Pap, T. Pavelka

SEMI Seminars, July 17 to 19, 2007, San Francisco, USA, West Coast Junction Technology Group, USJ metrology seminar

2007 Metrology, Analysis and Charaterization in Micro- and Nanotechnologies - A European Challenge L. Pfitzner, A. Nutsch, R. Oechsner, M. Pfeffer, E. Don, C. Wylon, M. Hurlebaus

Proceedings of Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007), pages 35-49

2008 Ultra Shallow Junctions fabrication by Plasma Immersion Implantation on PULSION® followed by Spike and/or Flash Annealing. Effect of pre-amorphization and co-implantation on Boron diffusion in Silicon H. Etienne, F. Torregrosa, G. Semoere, G. Mathieu, L. Roux, F. Cristiano, P. Fazzini, W. Lerch, S. Paul, J. Gelpey, F. Milesi, F. Gonzatti, A. Pap, K. Kis-Szabo, T. Pavelka

E-MRS Spring Meeting, Strasbourg, France, May 26 - May 30, Symposium I

2008 Ultra‐Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION® Followed by Laser Thermal Processing F. Torregrosa, H. Etienne, G. Sempere, G. Mathieu, L. Roux, V. Vervisch, P. Delaporte, T. Sarnet, A. Pap, K. Kis‐Szabó, T. Pavelka and C. Grosjean

17th International Conference on Ion Implantation Technology, 8–13 June 2008, Monterey, California

2008 Nanomechanical properties of ion-implanted Si P.M. Nagy, D. Aranyi, P. Horváth, G. Pető, E. Kálmán

Surface and Interface Analysis, Vol. 40, Issue 3-4, p 875-880, 10 March, 2008

2008 Fabrication and characterisation challenges on Ultra Shallow Junctions for sub 45 nm CMOS devices F. Torregrosa, H. Etienne, G. Sempere, G. Mathieu, L. Roux, C. Grosjean, R. Daineche, Y. De Puydt, L. Dupuy, P. Galand, A. Pap, K. Kis-Szabo, T. Pavelka

11th Technical & Scientific Meeting of ARCSIS, 20-21 Nov., STUniversity in Fuveau, France (2008)

2008 Digital SPV Diffusion Length Metrology (E8-Fe) for Ultra-High Purity Silicon Wafers M. Wilson, A. Savtchouk, I. Tarasov, J. D’Amico, P. Edelman, N. Kochey, J. Lagowski

Electrical Chemical Society Fall Conference, 2008

2008 Determining of sheet resistance of implanted wafers with technique of non-contact junction photovoltage measurement -

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2008 Control of Laser Induced Interface Traps with In-line Corona Charge Metrology J-L. Everaert, E. Rosseel, C. Ortolland, M. Aoulaiche, T. Hoffmann, T. Pavelka, E. Don

Advanced Thermal Processing of Semiconductors, 2008. RTP 2008. 16th IEEE International Conference on

2008 Band offset diagnostics of advanced dielectrics P. Edelman, M. Wilson, J. D’Amico, A. Savtchouk, J. Lagowski

Journal of Materials Science: Materials in Electronics 19 (2008) 73

2008 Junction Photovoltage Metrology and high resolution mapping of ion implants electrically isolated from wafer surface F. Korsós, K. Kis-Szabó, E. Don, A. Pap, T. Pavelka, C. Laviron, M. Pfeffer

Ion Implantation Technology Conference, Monterey, California, 8th – 13th June

2009 Comparison of Silicon Surface Preparation Methods for Measurement of Minority Carrier Lifetime Using the Microwave Photoconductive Decay (µ-PCD) Coupled with Continuous Corona Charge (Charge-PCD) T. Pavelka, Á. Pap, P. Kenesei, M. Varga, F. Novinics, M. Tallián, G. Borionetti, G. Guaglio, M. Pfeffer, and E. Don

ECS Transactions Volume 25, Issue No. 3, Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 2009)

2009 In‐line 90 nm Technology Gate Oxide Nitrogen Monitoring With Non‐Contact Electrical Technique N. Pic, G. Polisski, E. Paire, V. Rizzo, C. Grosjean, B. Bortolotti, J. D'Amico, N. Cabuil

Frontiers of Characterization and Metrology for Nanoelectronics, 2009

2009 Application Of The SPV-based Surface Lifetime Technique To In-Line Monitoring Of Surface Cu Contamination J. D’Amico, A. Savtchouk, M. Wilson, C.H. Kim, H.W. Yoo, C.H. Lee, T.K. Kim, S.H. Son

Frontiers of Characterization and Metrology for Nanoelectronics, 2009

2010 Implant Monitoring Measurements On Ultra Shallow Implants Before And After Anneal Using Photomodulated Reflection And Junction Photovoltage Measurement Techniques M. Tallián, A. Pap, K. Mocsár, A. Somogyi, Gy. Nádudvari, D. Kosztka and T. Pavelka

ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010

2010 Monitoring Ion Implantation Energy Using Non‐contact Characterization Methods M. Tallián, A. Pap, K. Mocsár, A. Somogyi, G. Nádudvari, D. Kosztka and T. Pavelka

ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010

2010 Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance J-L. Everaert, E. Rosseel, A. Mészáros, K. Kis-Szabó, P. Tüttő, A. Pap, T. Pavelka, M. Wilson, A. Findlay, P. Edelman and J. Lagowski

217th ECS Meeting Vancouver, Canada, April 25-30, 2010

2010 Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics J-L. Everaert, E. Rosseel, J. Dekoster, A. Pap, A. Mészáros, K. Kis-Szabó and T. Pavelka

Appl. Phys. Lett. 96 (2010) 122906

2010 Accelerated Light-Induced Degradation (ALID) for Monitoring of Defects in PV Silicon Wafers and Solar Cells M. Wilson, P. Edelman, A. Savtchouk, J. D’Amico, A. Findlay, J. Lagowski

Journal of Electronic Materials 39 (2010) 642

2010 Impact of laser anneal thermal budget on the quality of thin SiGe channels with a high Ge content E. Rosseel, A. Hikavyy, J-L. Everaert, L. Witters, J. Mitard, T. Hoffmann, W. Vandervorst, A. Pap, T. Pavelka

18th International Conference on Advanced Thermal Processing of Semiconductors (RTP), 2010

2010 Multicrystalline solar grade silicon solar cells K. Peter, R. Kopecek, M. Wilson, J. Lagowski, E. Enebakk, A. Soiland, S. Grandum

35th IEEE Photovoltaic Specialists Conference (PVSC), 2010

2011 Emitter passivation by charge injection M. Wilson, J. Lagowski, A. Savtchouk, A. Findlay, L. Jastrzebski, S. Olibet, V.D. Mihailetchi

IEEE 37th Photovoltaic Specialists Conference (PVSC), 2011

2011 Monitoring of Incoming Silicon PV Wafers with Modified Surface Photovoltage (SPV) Minority Carrier Diffusion Length Method M. Wilson, A. Savtchouk, F. Buchholz, S. Olibet, R. Kopecek, K. Peter

26th European Photovoltaic Solar Energy Conference and Exhibition

2011 QSS-μPCD measurement of lifetime in silicon wafers: advantages and new applications M. Wilson, A. Savtchouk, J. Lagowskia, K. Kis-Szabó, F. Korsós, A. Tóth, R. Kopecek, V.D. Mihailetchi

Proceedings of the SiliconPV 2011 Conference (1st International Conference on Crystalline Silicon Photovoltaics)

2011 Lifetime Degradation in Dark Observed in Mono Crystalline Cz-Silicon J. Arumughan, J. Theobald, M. Wilson, L. Hildebrand, R. Petres, A. Savtchouk, R. Kopecek

26th European Photovoltaic Solar Energy Conference and Exhibition

2011 New µ-PCD Based Method for Sorting Boron and Gallium Doped Feedstock Material F. Korsós, G. Paráda, D. Fátay

26th European Photovoltaic Solar Energy Conference and Exhibition

2011 Novel noncontact approach to monitoring the field-effect passivation of emitters M.Wilson, A. Savtchouk, J. Lagowski, F. Korsós, A. Tóth, R. Kopecek, V.D. Mihailetchic, R. Petres, T. Boescke

Proceedings of the SiliconPV 2011 Conference (1st International Conference on Crystalline Silicon Photovoltaics)

2011 Light Induced Degradation in Multicrystalline Solar Grade Silicon Solar Cells Evaluated Using Accelerated LID K. Peter, P. Preis, P.E. Díaz-Pérez, J. Theobald, E. Enebakk, A.-K. Soiland, A. Savtchouk, M. Wilson

26th European Photovoltaic Solar Energy Conference and Exhibition

2011 Multifunction metrology platform for photovoltaics M. Wilson, J. D'Amico, A. Savtchouk, P. Edelman, A. Findlay, L. Jastrzebski, J. Lagowski, K. Kis-Szabó, F. Korsós, A. Tóth, A. Pap, R. Kopecek, K. Peter

IEEE 37th Photovoltaic Specialists Conference (PVSC), 2011

2012 Unified Lifetime measurement for silicon PV M. Wilson, J. Lagowski, P. Edelman, A. Savtchouk, A. Findlay, S. Olibet, V. Mihailetchi

38th IEEE Photovoltaic Specialists Conference (PVSC), 2012

2012 Unification of Excess Carrier Lifetime Measurement for Silicon PV M. Wilson, A. Savtchouk, F. Korsós, G. Paráda, K. Kis-Szabo, V.D. Mihailetchi, S. Olibet

27th European Photovoltaic Solar Energy Conference and Exhibition

2012 Improved QSS-μPCD measurement with quality of decay control: Correlation with steady-state carrier lifetime M. Wilson, P. Edelman, J. Lagowski, S. Olibet, V. Mihailetchi

Solar Energy Materials and Solar Cells 106 (2012) 66

2012 State-of-the-art surface passivation of boron emitters using inline PECVD AlOx/SiNx stacks for industrial high-efficiency silicon wafer solar cells S. Duttagupta, Fen Lin, K.D. Shetty, M. Wilson, Fa-Jun Ma, Jiaji Lin, A.G. Aberle, B. Hoex

38th IEEE Photovoltaic Specialists Conference (PVSC), 2012

2012 Recombination via point defects and their complexes in solar silicon A.R. Peaker, V.P. Markevich, B. Hamilton, G. Parada, A. Dudás, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon and G. Rozgonyi

Physica Status Solidi (a) Volume 209, Issue 10, pages 1884–1893

2012 Photoluminescence Imaging of as-Cut Wafers Combined with Lifetime Calibration by MW-PCD Technique F. Korsós, J. Csontos, Z. Kiss, G. Nádudvari, P. Tüttő, Z. Tóth, M. Wilson

27th European Photovoltaic Solar Energy Conference and Exhibition

2012 Integrated electrical and optical characterization of large area thin film photovoltaic materials G. Szitási, F. Korsós, D. Selmeczi, O. Takács, F. Novinics, P. Tüttő, A. Findlay, M. Wilson

38th IEEE Photovoltaic Specialists Conference (PVSC), 2012

2013 Spectroscopic ellipsometry on metal and metal-oxide multilayer hybrid plasmonic nanostructures A.A. Khosroabadi, P. Gangopadhyay, B. Cocilovo, L. Makai, P. Basa, B. Duong, J. Thomas, and R.A. Norwood

Optics Letters, Vol. 38, Issue 19, pp. 3969-3972

2013 Comparison of laser textured silicon surfaces prepared by different laser sources Z. Tóth, A. Gárdián, M. Füle, J. Csontos, F. Korsós, P. Basa

28th European Photovoltaic Solar Energy Conference and Exhibition

2013 Novel Approach to In-Line PL Imaging for Passivation Inspection of Silicon PV F. Korsós, Z. Kiss, G. Nádudvari, A. Zsovár, M. Wilson, P. Edelman, J. Lagowski, J. Chen, L. Zhao, C. Zhou, W. Wang, B. Wang

28th European Photovoltaic Solar Energy Conference and Exhibition

2013 Importance of defect photoionization in silicon-rich SiNx dielectrics for high PID resistance M. Wilson, A. Savthouck, J. D'Amico, J. Lagowski, S. Schmitt, A. Schneider, S. Olibet

39th IEEE Photovoltaic Specialists Conference (PVSC), 2013

2013 Advanced Interface Trap Metrology for Silicon PV J. D'Amico, M. Wilson, C. Almeida, J. Lagowski, S. Olibet

28th European Photovoltaic Solar Energy Conference and Exhibition

2013 Single image concept for photoluminescence based emitter saturation current imaging using direct calibration by the QSS-μPCD method F. Korsós, A. Zsóvár, J. Lagowski, M. Wilson, Z. Kiss, Z. Kovács, G. Nádudvari

39th IEEE Photovoltaic Specialists Conference (PVSC), 2013

2013 Application of Corona-Kelvin Metrology for Optimizing Surface Passivation: Dit, Surface Recombination and PID A. Savtchouk, M. Wilson, J. Lagowski, J. D’Amico, A. Findlay, P. Edelman

23rd Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes (NREL), July 2013 Breckinridge, CO

 

2013 Lifetime Measurements on Attached Epilayers and Detached Epifoils Grown on Reorganised Porous Silicon Showing a Bulk Lifetime Exceeding 100 μs H.S. Radhakrishnan, M. Debucquoy, F. Korsós, K. Van Nieuwenhuysen, V. Depauw, I. Gordon, R. Mertens, J. Poortmans

Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)

2013 Technique for monitoring of PID susceptibility and interface trap density in advanced passivation dielectrics M. Wilson, A. Findlay, J. Lagowski, J. D’Amico, A. Savtchouk

9th China SoG Silicon and PV Power Conference, June 2013, Suzhou, China

2013 Unified Lifetime Metrology and Photoluminescence Imaging for Silicon PV M. Wilson, J. Lagowski, P. Edelman, F. Korsós, G. Nádudvari, Z. Kiss, J. Schmauder, V. Mihailetchi, S. Olibet

Proceedings of the 3rd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2013)

2013 Noncontact Imaging of PID Susceptibility of Passivation Films and Monitoring of Relevant Dielectric Properties A. Findlay, M. Wilson, J. Lagowski, J. D’Amico, S. Savtchouk

SNEC PV Power Expo May 2013 Shanghai, China

2013 Influence of precursor gas ratio and firing on silicon surface passivation by APCVD aluminium oxide K.O. Davis, K. Jiang, M. Wilson, C. Demberger, H. Zunft, H. Haverkamp, D. Habermann, W.V. Schoenfeld

Physica Status Solidi (RRL) - Rapid Research Letters 7 (2013) 942

2013 Kelvin Force Microscopy Characterization of Corona Charged Dielectric Surfaces D. Marinskiy, P. Edelman, A.D. Snider

15th Int. Conference on Defects Recognition, Imaging and Physics in Semiconductors, Warsaw, Poland 2013

2013 Development of a-Si:H/c-Si heterojunctions for the i2-module concept: Low-temperature passivation and emitter formation on wafers bonded to glass J. Govaerts, S.N. Granata, T. Bearda, F. Dross, C. Boulord, G. Beaucarne, F. Korsós, K. Baert, I. Gordon, J. Poortmans

Solar Energy Materials and Solar Cells 113 (2013) 52

2013 Characterization of residual implant damage by generation time technique Y.J. Jee, C.Y. Kim, C.S. Jun, T.S. Kim, A. Belyaev, D. Marinskiy

Solid-State Electronics 82 (2013) 16

2014 Interface Traps at Intrinsic ia-Si:H/c-Si Interfaces A. Savtchouk, M. Wilson, P. Edelman, J. Lagowski, Z. Xu, R. Yang, T. Guo, C. Zhou, H. Diao, Y. Xiang, L. Zhao, W. Zhang

24th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes (NREL), July 2014 Breckinridge, CO

2014 Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In0.53 Ga0.47 As/Al2O3/HfO2 Stack J. D’Amico, A. Savtchouk, M. Wilson, J. Lagowski, W. Wang, T. Kim, G. Bersuker, D. Veksler, D. Koh

2014 Spring Meeting of the Material Research Society

2014 New Approach to Surface Voltage Based Non-Visual Defect Inspection D. Marinskiy, J. Lagowski, M. Wilson, A. Findlay, C. Almeida, P. Edelman

ECS Transactions 60 (2014) 917

2014 Air Gap CV measurement for doping concentration in epitaxial silicon F. Heider, J. Baumgartl, P. Horváth, T. Jaehrling

Advanced Semiconductor Manufacturing Conference (ASMC)

2014 Measuring CET of High-k Dielectrics with Novel Kinetic Approach Using Micro-Site Corona – Kelvin Method D. Marinskiy, T.C. Loy, H.C. Yeh, M. Wilson, J. Lagowski

ECS Transactions, 61 ( 2014) 61

2014 Detection and characterization of three-dimensional interconnect bonding voids by infrared microscopy J. Höglund, Z. Kiss, G. Nádudvari, Zs. Kovács, Sz. Velkei, C. Moore, V. Vartanian, R.A. Allen

Journal of Micro/Nanolithography, MEMS, and MOEMS Vol. 13(1) 011208

2014 Transient Method for Lifetime Characterization of Monocrystalline Si Ingots G. Paráda, F. Korsós, P. Tüttő

29th European Photovoltaic Solar Energy Conference and Exhibition

2014 Lifetime Characterization of mc:Si Bricks by Upgraded μ-PCD Technique F. Korsós, A. Jász

China Semiconductor Technology International Conference 2014 (CSTIC 2014)

2014 Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces A. Findlay, J. Lagowski, M. Wilson, J. D'Amico, A. Savtchouk, F. Korsós, G. Nádudvari

Solid State Phenomena 205-206 (2014) 128

2014 Non-contact high precision alternative to Hg-probe for dopant profiling in SiC A. Czett, Cs. Buday, S. Savtchouk and D. Marinskiy

Physica Status Solidi (c) 11 (2014) 1601

2014 Application of non-contact corona-Kelvin metrology for characterization of PV dielectrics on textured surfaces M. Wilson, Z. Hameiri, N. Nandakumar, S. Duttagupta

40th IEEE Photovoltaic Specialist Conference (PVSC), 2014

2014 Experimental study on the role of parameters affecting surface recombination and emitter passivation M. Wilson, A. Findlay, J. D'Amico, A. Savtchouk, J. Lagowski, Z. Xu, R. Yang, T. Guo

40th IEEE Photovoltaic Specialist Conference (PVSC), 2014