Ion Implant Monitoring
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Modern semiconductor devices require precisely controlled dopant concentration and position, and this can only be achieved via ion implant, with careful annealing. Typically an n-type species is implanted into p-type material, or vice versa. Implants are monitored by implanting a monitor wafer, and the monitor wafers are checked after implant and after anneal.
JPV is an innovative method of checking ion implants after anneal, by measuring the sheet resistance of the implanted layer. This technology is available in Semilab’s WT-2500 and WT-3000 measurement systems.
Technologies:
